SSF4032CH3 Main Product Characteristics: VDSS NMOS PMOS 40V -40V RDS(on) 16mohm(typ.) 25mohm(typ.) ID 6A -4.5A Schematic diagram SOP-8 Bottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and general purpose applications Ultra low on-resistance with low gate charge 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others applications Absolute max Rating: Symbol Max. Parameter N-channel P-channel Units ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V① 6 -5 ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V① 4.2 -4 IDM Pulsed Drain Current② 18.8 -12.5 PD @TC = 25°C Power Dissipation③ 2.1 1.8 W VDS Drain-Source Voltage 40 -40 V VGS Gate-to-Source Voltage ± 20 ± 20 V -55 to + 150 -55 to + 150 °C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO., LTD. 2015.01.20 www.silikron.com Version: 1.0 preliminary A page 1 of 6 SSF4032CH3 Thermal Resistance Symbol RθJA Characterizes Typ. V(BR)DSS IDSS IGSS Units 60 95 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 40 ℃/W Parameter unless otherwise specified Min. Typ. Max. Units Conditions Drain-to-Source N-channel 40 — — breakdown voltage P-channel -40 — — N-channel — — 32 P-channel — — 42 N-channel — — 43 P-channel — — 65 VGS=-4.5V,ID = -2A N-channel 1 — 3 VDS = VGS, ID = 250μA Gate threshold P-channel 1 — 3 voltage N-channel -1 — -3 P-channel -1 — -3 Drain-to-Source N-channel — — 1 leakage current P-channel — — -1 N-channel — — 100 Gate-to-Source N-channel — — -100 forward leakage P-channel — — 100 P-channel — — -100 Drain-to-Source on-resistance VGS(th) P-channel — Static RDS(on) N-channel Junction-to-ambient (t ≤ 10s) ④ Electrical Characterizes @TA=25℃ Symbol Max. V VGS = 0V, ID = 250μA VGS = 0V, ID = -250μA VGS=10V,ID = 6A mΩ V VGS=-10V,ID = -5A VGS=4.5V,ID = 5A TJ = 125°C VDS = VGS, ID = -250μA TJ = 125°C μA VDS = 40V,VGS = 0V VDS = -40V,VGS = 0V VGS =20V nA VGS = -20V VGS =20V VGS = -20V Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Min. Typ. Max. Continuous Source Current — — 6 — — -5 Pulsed Source Current — — 18.8 (Body Diode) — — -12.5 — 0.82 1.2 — -0.84 -1.2 (Body Diode) Diode Forward Voltage Units Conditions MOSFET symbol A showing the integral reverse A V p-n junction diode. IS=2.4A, VGS=0V IS=-1.5A, VGS=0V Test circuits and Waveforms ©Silikron Semiconductor CO.,LTD. 2015.01.20 www.silikron.com Version : 1.0 preliminary page 2 of 6 SSF4032CH3 Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C Mechanical Data： ©Silikron Semiconductor CO.,LTD. 2015.01.20 www.silikron.com Version : 1.0 preliminary page 3 of 6 SSF4032CH3 SOP-8 NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Ordering and Marking Information ©Silikron Semiconductor CO.,LTD. 2015.01.20 www.silikron.com Version : 1.0 preliminary page 4 of 6 SSF4032CH3 Device Marking: 4032CH3 Package (Available) SOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/T Tapes/Inn ape er Box Units/Inner Inner Box Boxes/Carto n Box Units/Carton Box SOP-8 2500 5000 40000 2 8 ATTENTION: ©Silikron Semiconductor CO.,LTD. 2015.01.20 www.silikron.com Version : 1.0 preliminary page 5 of 6 SSF4032CH3 ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2015.01.20 www.silikron.com Version : 1.0 preliminary page 6 of 6