Datesheet - Silikron

SSF4032CH3 Main Product Characteristics: VDSS
NMOS
PMOS
40V
-40V
RDS(on) 16mohm(typ.) 25mohm(typ.)
ID
6A
-4.5A
Schematic diagram SOP-8
Bottom View
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for buck-boost circuit, DSC, portable
devices and general purpose applications
Ultra low on-resistance with low gate charge
150℃ operating temperature




Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others
applications Absolute max Rating:
Symbol
Max.
Parameter
N-channel
P-channel
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 4.5V①
6
-5
ID @ TC = 100°C
Continuous Drain Current, VGS @ 4.5V①
4.2
-4
IDM
Pulsed Drain Current②
18.8
-12.5
PD @TC = 25°C
Power Dissipation③
2.1
1.8
W
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-to-Source Voltage
± 20
± 20
V
-55 to + 150
-55 to + 150
°C
TJ TSTG
Operating Junction and Storage Temperature
Range
©Silikron Semiconductor CO., LTD.
2015.01.20
www.silikron.com Version: 1.0 preliminary
A
page 1 of 6
SSF4032CH3 Thermal Resistance
Symbol
RθJA
Characterizes
Typ.
V(BR)DSS
IDSS
IGSS
Units
60
95
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
40
℃/W
Parameter
unless otherwise specified
Min.
Typ.
Max.
Units
Conditions
Drain-to-Source
N-channel
40
—
—
breakdown voltage
P-channel
-40
— —
N-channel
—
—
32
P-channel
— — 42
N-channel
— — 43
P-channel
— — 65
VGS=-4.5V,ID = -2A
N-channel
1
—
3
VDS = VGS, ID = 250μA
Gate threshold
P-channel
1
— 3
voltage
N-channel
-1
— -3
P-channel
-1
— -3
Drain-to-Source
N-channel
—
—
1
leakage current
P-channel
—
—
-1
N-channel
— — 100
Gate-to-Source
N-channel
— — -100
forward leakage
P-channel
— — 100
P-channel
— — -100
Drain-to-Source
on-resistance
VGS(th)
P-channel
—
Static
RDS(on)
N-channel
Junction-to-ambient (t ≤ 10s) ④
Electrical Characterizes @TA=25℃
Symbol
Max.
V
VGS = 0V, ID = 250μA
VGS = 0V, ID = -250μA
VGS=10V,ID = 6A
mΩ
V
VGS=-10V,ID = -5A
VGS=4.5V,ID = 5A
TJ = 125°C
VDS = VGS, ID = -250μA
TJ = 125°C
μA
VDS = 40V,VGS = 0V
VDS = -40V,VGS = 0V
VGS =20V
nA
VGS = -20V
VGS =20V
VGS = -20V
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Min.
Typ.
Max.
Continuous Source Current
—
—
6
—
—
-5
Pulsed Source Current
—
—
18.8
(Body Diode)
—
—
-12.5
—
0.82
1.2
—
-0.84
-1.2
(Body Diode)
Diode Forward Voltage
Units
Conditions
MOSFET symbol
A
showing the
integral reverse
A
V
p-n junction diode.
IS=2.4A, VGS=0V
IS=-1.5A, VGS=0V
Test circuits and Waveforms
©Silikron Semiconductor CO.,LTD.
2015.01.20
www.silikron.com Version : 1.0 preliminary
page 2 of 6
SSF4032CH3 Switch Waveforms:
Notes: ①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
Mechanical Data:
©Silikron Semiconductor CO.,LTD.
2015.01.20
www.silikron.com Version : 1.0 preliminary
page 3 of 6
SSF4032CH3 SOP-8
NOTES:
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Ordering and Marking Information
©Silikron Semiconductor CO.,LTD.
2015.01.20
www.silikron.com Version : 1.0 preliminary
page 4 of 6
SSF4032CH3 Device Marking: 4032CH3
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/T Tapes/Inn
ape
er
Box
Units/Inner Inner
Box
Boxes/Carto
n
Box
Units/Carton
Box
SOP-8
2500
5000
40000
2
8
ATTENTION:
©Silikron Semiconductor CO.,LTD.
2015.01.20
www.silikron.com Version : 1.0 preliminary
page 5 of 6
SSF4032CH3 ■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
Customer Service
Worldwide Sales and Service:
Sales@silikron.com
Technical Support:
Technical@silikron.com
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: Sales@silikron.com
©Silikron Semiconductor CO.,LTD.
2015.01.20
www.silikron.com Version : 1.0 preliminary
page 6 of 6