SSF2649 Main Product Characteristics: VDSS -20V RDS(on) 49mohm(typ.) ID -7.9A D1 S1 Marking and pin S2 Schematic diagram Assignment Features and Benefits: G2 G1 SOP-8 D2 Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V ID -7.9 A IDM -30 A PD 5 W TJ,TSTG -55 To 150 ℃ RθJA 85 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) ©Silikron Semiconductor CO., LTD. 2011.05.25 www.silikron.com Version: 1.0 page 1 of 6 SSF2649 Electrical Characterizes @TA=25℃ Symbol Parameter unless otherwise specified Conditions Min Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -3.0 V Drain-Source On-State Resistance RDS(ON) -0.7 VGS=-4.5V, ID =-2.9A 49 58 VGS=-2.7V, ID =-1.5A 82 98 VDS=-5V,ID=-5.3A - S 1040 PF 156 PF 112 PF 9 nS mΩ Forward Transconductance gFS Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V, ID =-1A 8 nS td(off) VGS=-4.5V,RGEN=6Ω 87 nS 38 nS 12 nC 2.7 nC 1.5 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-20V,VGS=0V, F=1.0MHz VDS=-10V, ID=-4.7A,VGS=-4.5V Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Min. Typ. — — -7.9 A — — -30 A — — -1 V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Max. Units Conditions MOSFET symbol showing the D integral reverse G p-n junction diode. IS=-2.9A, VGS=0V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO., LTD. 2011.07.17 www.silikron.com Version: 1.0 page 2 of 6 SSF2649 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Figure 1: Switching Test Circuit Figure 2: Switching Waveforms Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO., LTD. 2011.07.17 www.silikron.com Version: 1.0 page 3 of 6 SSF2649 Mechanical Data： NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO., LTD. 2011.07.17 www.silikron.com Version: 1.0 page 4 of 6 SSF2649 Ordering and Marking Information Device Marking: SSF2649 Package (Available) SOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Packag e Type Units/Tu Tubes/Inner be Box SOP-8 2500 2 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Units/Inner Inner Box Boxes/Carton Box 5000 8 Duration Sample Size Tj=125℃ or 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=125℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO., LTD. 2011.07.17 www.silikron.com Version: 1.0 Units/Carton Box 40000 page 5 of 6 SSF2649 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2011.07.17 www.silikron.com Version: 1.0 page 6 of 6