SSF1030B
Feathers:
Advanced trench process technology
Ultra low Rdson, typical 25mohm
ID =7A
High avalanche energy, 100% test
BV=100V
Fully characterized avalanche voltage and current
Rdson=25mΩ（typ.）
Description:
The SSF1030B is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1030B is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
SOP-8 TOP View
Marking and pin Assignment
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
7
ID@Tc=100ْC
Continuous drain current,VGS@10V
5.0
IDM
Pulsed drain current
①
Units
A
30
PD@TC=25ْC
Power dissipation
8.8
W
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
33
mJ
EAR
Repetitive avalanche energy
TBD
TJ
Operating Junction and
TSTG
Storage Temperature Range
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
17
—
RθJA
Junction-to-ambient
—
—
85
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
25
30
mΩ
VGS=10V,ID=10A
VGS(th)
Gate threshold voltage
2.0
3.1
4.0
V
VDS=VGS,ID=250μA
Forward transconductance
—
25
—
S
VDS=15V,ID=6.9A
—
—
1
—
—
10
gfs
IDSS
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2011.2.23
VDS=100V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
Version: 1.1
page
1 of 5
SSF1030B
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Total gate charge
—
42
—
ID=6.9A
Qgs
Gate-to-Source charge
—
15
—
VDD=30V
Qgd
Gate-to-Drain("Miller") charge
—
14.6
—
VGS=10V
td(on)
Turn-on delay time
—
14.2
—
VDD=30V
Rise time
—
40
—
Turn-Off delay time
—
7.3
—
Fall time
—
14.8
—
VGS=10V
Ciss
Input capacitance
—
190
—
VGS=0V
Coss
Output capacitance
—
135
—
Crss
Reverse transfer capacitance
—
4.2
—
IGSS
Qg
tr
td(off)
tf
VGS=20V
nA
VGS=-20V
nC
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
.
Forward Turn-on Time
.
Min.
Typ.
Max.
—
—
7
Units
Test Conditions
MOSFET symbol
A
showing the
integral reverse
—
—
30
—
—
1.3
V
TJ=25ْC,IS=30A,VGS=0V ③
－
57
—
nS
TJ=25ْC,IF=3.1A
－
107
—
nC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 15A, VDD = 50V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
©Silikron Semiconductor Corporation
2011.2.23
Version: 1.1
page
2 of 5
SSF1030B
BV dss
V dd
L
Vgs
RL
VDD
RG
1mA
EAS test circuit
RG
Gate charge test circuit
Switch Waveforms
Thermal Resistance
ZthJA Normalized Transient
Switch Time Test Circuit
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2011.2.23
Version: 1.1
page
3 of 5
SSF1030B
SOP-8 PACKAGE INFORMATION
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor Corporation
2011.2.23
Version: 1.1
page
4 of 5
SSF1030B
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
Silikron representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage
to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur.
Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,
and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor Corporation
2011.2.23
Version: 1.1
page
5 of 5