SSF1122D
Feathers:
Advanced trench process technology
ID =60A
Ultra low Rdson
BV=110V
High avalanche energy, 100% test
Rdson=20mΩ（Typ.）
Fully characterized avalanche voltage and current
Description:
The SSF1122D is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1122D is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
SSF1122D TOP View (DPAK)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
60
ID@Tc=100ْC
Continuous drain current,VGS@10V
50
IDM
Pulsed drain current ①
240
Power dissipation
143
W
Linear derating factor
2.0
W/ ْC
Gate-to-Source voltage
±20
V
240
mJ
PD@TC=25ْC
VGS
EAS
Single pulse avalanche energy
EAR
Repetitive avalanche energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
②
Units
A
TBD
ْC
–55 to +175
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
1.05
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
BVDSS
Drain-to-Source breakdown voltage
110
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
20
22
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
3.0
4.0
V
VDS=VGS,ID=250μA
gfs
Forward transconductance
—
58
—
S
VDS=5V,ID=30A
—
—
1
—
—
10
IDSS
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2010.12.10
Max. Units
Test Conditions
VDS=110V,VGS=0V
μA
VDS=110V,
VGS=0V,TJ=150ْC
Version: 2.1
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SSF1122D
VGS=20V
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
90
—
Qgs
Gate-to-Source charge
—
14
—
Qgd
Gate-to-Drain("Miller") charge
—
24
—
VGS=10V
td(on)
Turn-on delay time
—
18.2
—
VDD=30V
tr
Rise time
—
15.6
—
td(off)
Turn-Off delay time
—
70.5
—
tf
Fall time
—
13.8
—
VGS=10V
Ciss
Input capacitance
—
3150
—
VGS=0V
Coss
Output capacitance
—
300
—
IGSS
Crss
Reverse transfer capacitance
—
240
nA
VGS=-20V
ID=30A
VDD=30V
nC
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
—
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode) ①
Min.
Typ.
Max.
—
—
60
Units
MOSFET symbol
showing the
A
—
—
240
Test Conditions
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=30A,VGS=0V ③
trr
Reverse Recovery Time
—
57
—
nS
TJ=25ْC,IF=60A
Qrr
Reverse Recovery Charge
—
107
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 40A, VDD = 50V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
EAS test circuit
©Silikron Semiconductor Corporation
Gate charge test circuit
2010.12.10
Version: 2.1
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SSF1122D
Switch Time Test Circuit：
Switch Waveforms:
Transfer Characteristic
Capacitance:
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
©Silikron Semiconductor Corporation
2010.12.10
Version: 2.1
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SSF1122D
Source-Drain Diode Forward Voltage
Max Drain Current vs. Junction Temperature
Gate Charge
Safe Operation Area
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2010.12.10
Version: 2.1
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SSF1122D
DPAK MECHANICAL DATA:
©Silikron Semiconductor Corporation
2010.12.10
Version: 2.1
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