SSFD4024 Main Product Characteristics:
VDSS
40V
RDS(on)
30 mohm
ID
12A
TO-252 top view
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for Convertors and power controls
Ultra low on-resistance
175℃ operating temperature
SSFD4024 Marking and pin Assignment
Description:
It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications
Absolute max Rating:
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
12
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
12
IDM
Pulsed Drain Current①
30
PD @TC = 25°C
Power Dissipation
20
W
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy②
22
mJ
IAR
Avalanche Current @ L=0.3mH
10
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
A
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Value
Unit
Junction-to-case
7.5
℃/W
Junction-to-ambient
30
℃/W
Junction-to-Ambient (PCB mounted, steady-state)
60
℃/W
©Silikron Semiconductor CO.,LTD.
2010.09.01
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SSFD4024 Electrical Characterizes @TA=25℃ unless otherwise specified
Parameter
Min.
Typ.
Max
Units
Conditions
BVDSS
Drain-to-Source breakdown voltage
40
—
—
V
VGS = 0V, ID = 250μA
RDS(on)
Static Drain-to-Source on-resistance
—
24
30
mΩ
VGS = 10V, ID = 12A③
VGS(th)
Gate threshold voltage
1
—
3
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
1
—
—
150
Gate-to-Source forward leakage
— — 100
Gate-to-Source reverse leakage
— — -100
Qg
Total gate charge
— 9.5
—
Qgs
Gate-to-Source charge
— 4.5
— Qgd
Gate-to-Drain("Miller") charge
— 1.5
— td(on)
Turn-on delay time
— 3.5
— tr
Rise time
— 6
— td(off)
Turn-Off delay time
— 13.5
— tf
Fall time
— 3.5
— Ciss
Input capacitance
— 410
— Coss
Output capacitance
— 95
— Crss
Reverse transfer capacitance
— 35
— IGSS
VDS = 40V, VGS = 0V
μA
VDS = 40V, VGS = 0V, TJ =
125°C
nA
VGS = 20V
VGS = -20V
nC
ns
pF
ID = 12A VDS =20V VGS =
10V③
VDD = 20V ID = 12A RG = 1.7
Ω VGS = 10V③
VGS = 0V VDS = 20V ƒ =
1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Min.
Typ.
Max
Units
MOSFET symbol
Continuous
Source
Current
(Body Diode)
Conditions
—
—
12
A
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward
Voltage
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ton
—
—
23
1.0
V
—
ns
TJ = 25°C, IF = 1A, VDD = 20V di/dt = 100A/μs③
TJ = 25°C, IF = 12A, VDD = 20V di/dt = 100A/μs③
—
Forward Turn-on
Time
©Silikron Semiconductor CO.,LTD.
0.75
18.5
—
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2010.09.01
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SSFD4024 Notes:
①Repetitive rating; pulse width limited by max. junction temperature.
②Limited by TJmax, starting TJ = 25°C, L = 0.3mH RG =50Ω, IAS = 82A, VGS =10V. Part not
recommended for use above this value.
③Pulse width < 1.0ms; duty cycle<2%.
©Silikron Semiconductor CO.,LTD.
2010.09.01
www.silikron.com Version : 1.0
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SSFD4024 Mechanical Data：
TO-252E-2-M PACKAGE INFORMATION
Dimensions in Millimeters
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
2010.09.01
www.silikron.com Version : 1.0
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