Datasheet - Silikron

SSF3612
D
DESCRIPTION
The SSF3612 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 30V,ID =11.6A
RDS(ON) < 17mΩ @ VGS=4.5V
RDS(ON) < 12mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF3612
SSF3612
SOP-8
Ø330mm
12mm
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID(25℃)
11.6
A
ID(70℃)
9
A
IDM
50
A
PD
3.1
W
TJ,TSTG
-55 To 150
℃
RθJA
40
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=250μA
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SSF3612
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=10m A
2
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=10A
13
17
mΩ
VGS=10V, ID=11.6A
9
12
mΩ
VDS=5V,ID=11.6A
18
S
1302
PF
211
PF
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1.5
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
159
PF
Turn-on Delay Time
td(on)
6.52
nS
Turn-on Rise Time
tr
4.16
nS
20.08
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=15V,VGS=10V,RGEN=3Ω
ID=1A
Turn-Off Fall Time
tf
5.68
nS
Total Gate Charge
Qg
24.88
nC
Gate-Source Charge
Qgs
4.19
nC
Gate-Drain Charge
Qgd
4.95
nC
Body Diode Reverse Recovery Time
Trr
9.41
nS
Body Diode Reverse Recovery Charge
Qrr
3.2
nC
VDS=15V,ID=11.6A,VGS=10V
IF=11.6A, dI/dt=100A/µs
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.75
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF3612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
Vgs
Rgen
D
Vout
G
S
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
SSF3612
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
SSF3612
Vds Drain-Source Voltage (V)
Safe Operation Area
ZthJA Normalized Transient
Thermal Resistance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
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SSF3612
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF3612
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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©Silikron Semiconductor CO.,LTD.
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