SSF3056C Main Product Characteristics: NMOS PMOS D1 S1 NMOS VDSS 30V -30V D1 G1 D2 S2 PMOS RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A D2 G2 -4.5A Schematic diagram DFN2X3-8L Bottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and general purpose applications Ultra low on-resistance with low gate charge 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others applications Absolute max Rating: Symbol Max. Parameter N-channel P-channel Units ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V① 5 -4.5 ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V① 4.2 -3.4 IDM Pulsed Drain Current② 18.8 -12.5 PD @TC = 25°C Power Dissipation③ 2.1 1.8 W VDS Drain-Source Voltage 30 -30 V VGS Gate-to-Source Voltage ± 12 ± 12 V -55 to + 150 -55 to + 150 °C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO.,LTD. 2011.07.15 www.silikron.com Version : 1.0 preliminary A page 1 of 6 SSF3056C Thermal Resistance Symbol Characterizes Typ. Max. N-channel P-channel Units Junction-to-ambient (t ≤ 10s) ④ — 60 95 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 40 ℃/W RθJA Electrical Characterizes @TA=25℃ Symbol V(BR)DSS Parameter Min. Typ. 30 — — 27.5 — — -30 — — -27.5 — — TJ = 125°C N-channel — 37 55 VGS=4.5V,ID = 4.8A P-channel — 68 85 N-channel — 50 90 P-channel — 84 115 VGS=-3.5V,ID = -1.8A N-channel 0.7 1.48 2 VDS = VGS, ID = 250μA Gate threshold P-channel 0.7 1.12 2 voltage N-channel -0.7 -1.49 -2 P-channel -0.7 -1.26 -2 Drain-to-Source N-channel — — 1 leakage current P-channel — — -1 N-channel — — 100 Gate-to-Source N-channel — — -100 forward leakage P-channel — — 100 P-channel — — -100 Drain-to-Source breakdown voltage Static RDS(on) Drain-to-Source on-resistance VGS(th) IDSS IGSS unless otherwise specified N-channel P-channel Max. Units Conditions VGS = 0V, ID = 250μA V mΩ V TJ = 125°C VGS = 0V, ID = -250μA VGS=-4.5V,ID = -2.3A VGS=3.5V,ID = 3.8A TJ = 125°C VDS = VGS, ID = -250μA TJ = 125°C μA VDS = 30V,VGS = 0V VDS = -30V,VGS = 0V VGS =12V nA VGS = -12V VGS =12V VGS = -12V Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Min. Typ. Max. Continuous Source Current — — 5 (Body Diode) — — -4.5 Pulsed Source Current — — 18.8 (Body Diode) — — -12.5 — 0.82 1.2 — -0.84 -1.2 Diode Forward Voltage ©Silikron Semiconductor CO.,LTD. Units MOSFET symbol A 2011.07.15 www.silikron.com Conditions showing the integral reverse A V p-n junction diode. IS=2.4A, VGS=0V IS=-1.5A, VGS=0V Version : 1.0 preliminary page 2 of 6 SSF3056C Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2011.07.15 www.silikron.com Version : 1.0 preliminary page 3 of 6 SSF3056C Mechanical Data： DFN2X3-8L Bottom View Bottom View Top View COMMON DIMENSIONS(MM) PKG. W:VERY VERY THIN REF. MIN. NOM. MAX. A 0.70 0.75 0.80 A1 0.00 — 0.05 A3 Side View 0.2 REF. D 2.95 3.00 3.05 E 1.95 2.00 2.05 b 0.25 0.30 0.35 L 0.25 0.35 0.45 D2 0.77 0.92 1.02 E2 0.38 0.53 0.63 e 0.65 BCS. NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 2011.07.15 www.silikron.com Version : 1.0 preliminary page 4 of 6 SSF3056C Ordering and Marking Information Device Marking: 3056C Package (Available) DFN2X3-8L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box DFN2*3-8L 3000pcs 10pcs 30000pcs 4pcs 120000pcs ©Silikron Semiconductor CO.,LTD. 2011.07.15 www.silikron.com Version : 1.0 preliminary page 5 of 6 SSF3056C ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2011.07.15 www.silikron.com Version : 1.0 preliminary page 6 of 6