RENESAS RQK0604IGDQATL-H

Preliminary Datasheet
RQK0604IGDQA
R07DS0308EJ0200
(Previous: REJ03G1496-0100)
Rev.2.00
Mar 28, 2011
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A)
• Low drive current
• High speed switching
• VDSS ≥ 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
2
G
1
1. Source
2. Gate
3. Drain
2
S
1
Note:
Marking is “IG“.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
Ratings
60
±12
Unit
V
V
ID
2
8
2
0.8
150
–55 to +150
A
A
A
W
°C
°C
Note1
ID(pulse)
IDR
Pch Note2
Tch
Tstg
Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
R07DS0308EJ0200 Rev.2.00
Mar 28, 2011
Page 1 of 7
RQK0604IGDQA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min
60
+12
–12
—
—
—
0.4
—
—
3
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
111
129
6
320
38
20
12
35
36
3.7
Max
—
—
—
+10
–10
1
1.4
144
180
—
—
—
—
—
—
—
—
Unit
V
V
V
μA
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
Total gate charge
Gate to Source charge
Gate to drain charge
Body - drain diode forward voltage
Qg
Qgs
Qgd
VDF
—
—
—
—
3.4
0.6
1.0
0.8
—
—
—
—
nC
nC
nC
V
Test conditions
ID = 10 mA, VGS = 0
IG = +100 μA, VDS = 0
IG = –100 μA, VDS = 0
VGS = +10 V, VDS = 0
VGS = –10 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 1 A, VGS = 4.5 V Note3
ID = 1 A, VGS = 2.5 V Note3
ID = 1 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 1 A
VGS = 10 V
RL = 10 Ω
Rg = 4.7 Ω
VDD = 10 V
VGS = 4.5 V
ID = 2 A
IF = 2 A, VGS = 0 Note3
Notes: 3. Pulse test
R07DS0308EJ0200 Rev.2.00
Mar 28, 2011
Page 2 of 7
RQK0604IGDQA
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
Test Condition :
When using the glass epoxy board
(FR-4 40 x 40 x 1 mm)
0.8
30
Drain Current ID (A)
Channel Dissipation
Pch (W)
1
0.6
0.4
0.2
3
PW
1
DC
0.3
1
=
10
μs
m
at
ion
Operation in this area
is limited by RDS(on)
0.03
0
s
s
Op
er
0.1
10
m
0.01
0.003 Ta = 25°C
1shot pulse
0.001
0.01 0.03 0.1 0.3
0
0
25
50
75
100 125 150 175
Ambient Temperature
1
3
10 30 100
Drain to Source Voltage VDS (V)
Ta (°C)
Typical Output Characteristics
Typical Transfer Characteristics (1)
10
10
3V
5V
8
VDS = 10 V
Pulse Test
2.2 V
2.4 V
Drain Current ID (A)
Drain Current ID (A)
10 μs
10
2V
7, 10 V
6
1.8 V
Pulse Test
Tc = 25°C
4
1.6 V
2
1.4 V
8
6
4
75°C
2
25°C
Tc = –25°C
VGS = 0 V
0
2
4
6
8
0
10
Drain to Source Voltage VDS (V)
1
2
3
4
Gate to Source Voltage VGS (V)
1
Drain Current ID (A)
VDS = 10 V
Pulse Test
0.1
0.01
Tc = 75°C
0.001
25°C
0.0001
–25°C
0.00001
0
0.5
1
1.5
Gate to Source Voltage VGS (V)
R07DS0308EJ0200 Rev.2.00
Mar 28, 2011
2
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics (2)
Case Temperature
10
ID = 10 mA
1
1 mA
0.1 mA
VDS = 10 V
Pulse Test
0
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 3 of 7
RQK0604IGDQA
Preliminary
500
Pulse Test
Tc = 25°C
400
300
2A
200
1.5 A
1A
100
ID = 0.5 A
0
2
4
6
8
10
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1000
Pulse Test
Tc = 25°C
2.5 V
100
VGS = 10 V
10
0.1
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
Drain to Source on State Resistance
RDS(on) (mΩ)
ID = 2 A
1.5 A
150
1A
0.5 A
100
50
–25
Pulse Test
VGS = 4.5 V
0
25
50
75
100 125 150
250
Pulse Test
VGS = 2.5 V
ID = 2 A
200
1.5 A
150
1A
0.5 A
100
50
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
Zero Gate Voltage Drain current vs.
Case Temperature
100
Pulse Test
VDS = 10 V
–25°C
10
1
25°C
Tc = 75°C
0.1
0.01
0.01
0.1
1
Drain Current ID (A)
R07DS0308EJ0200 Rev.2.00
Mar 28, 2011
10
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
200
10
1
Gate to Source Voltage VGS (V)
250
4.5 V
10000
1000
Pulse Test
VGS = 0 V
VDS = 60 V
100
10
1
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 4 of 7
RQK0604IGDQA
Preliminary
Switching Characteristics
16
VDD = 10 V
25 V
60
12
50 V
VGS
VDD = 50 V
40
8
25 V
10V
4
20
ID = 2.0 A
Tc = 25°C
0
VDS
0
2
4
6
1000
Switching Time t (ns)
80
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
td(off)
10
td(on)
0.1
10
1
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Input Capacitance vs.
Gate to Source Voltage
700
VGS = 0 V
f = 1 MHz
650
Ciss2 (pF)
Ciss
100
600
550
500
Coss
450
VDS = 0 V
f = 1 MHz
Crss
10
0
10
20
30
40
50
0
2
4
6
8 10
Gate to Source Voltage VGS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Body-Drain Diode Forward Voltage vs.
Case Temperature
8
10 V
6
4.5 V
4 2.5 V
VGS = –2.5 V,
–4.5 V,
–10 V
2
VGS = 0 V
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0308EJ0200 Rev.2.00
Mar 28, 2011
Body-Drain Diode Forward Voltage VSDF (V)
Drain to Source Voltage VDS (V)
Pulse Test
Tc = 25°C
0
400
–10 –8 –6 –4 –2
60
10
Reverse Drain Current IDR (A)
tf
tr
Gate Charge Qg (nc)
1000
Ciss1, Coss, Crss (pF)
100
1
0.01
0
10
8
VGS = 4.5 V, VDD = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
0.7
VGS = 0
0.6
0.5
ID = 10 mA
0.4
0.3
1 mA
0.2
0.1
0
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 5 of 7
RQK0604IGDQA
Preliminary
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
Rg
Waveform
D.U.T.
RL
Vin
Vout
Vin
10 V
VDD
= 10 V
10%
10%
90%
td(on)
R07DS0308EJ0200 Rev.2.00
Mar 28, 2011
10%
tr
90%
td(off)
tf
Page 6 of 7
RQK0604IGDQA
Preliminary
Package Dimensions
JEITA Package Code
SC-59A
Package Name
MPAK
RENESAS Code
PLSP0003ZB-A
D
Previous Code
MPAK(T) / MPAK(T)V
A
Q
e
E
c
HE
L
A
MASS[Typ.]
0.011g
LP
L1
A3
A
x M S
A
b
Reference Dimension in Millimeters
Symbol
Min Nom Max
e
A2
A
e1
A1
S
b
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.16
1.5
0.95
2.8
1.3
0.1
1.2
0.5
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.95
1.05
0.3
Ordering Information
Orderable Part Number
RQK0604IGDQATL-H
R07DS0308EJ0200 Rev.2.00
Mar 28, 2011
Quantity
3000 pcs.
Shipping Container
φ178 mm reel, 8 mm Emboss taping
Page 7 of 7
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Colophon 1.1