SSFD3006
Main Product Characteristics:
VDSS
30V
RDS(on)
3.8mΩ (typ.)
ID
90A
SSF3612D
SSFD3006
TO-252 (D-PAK) Marking and pin
Assignment Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
High Power and current handing capability
175℃ operating temperature
Schematic diagram Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate
charge. These features combine to make this design an extremely efficient and reliable device for use in PWM,
load switching and a wide variety of other applications. Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
90
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
66
IDM
Pulsed Drain Current②
360
ISM
Pulsed Source Current (Body Diode)②
360
PD @TC = 25°C
Power Dissipation③
75
W
PD @TC =100°C
Power Dissipation③
78
W
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak diode recovery voltage
1.5
V/nS
EAS
Single Pulse Avalanche Energy @ L=0.1mH
90
mJ
IAS
Avalanche Current @ L=0.1mH
42
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com Version : 1.0
A
page 1 of 8
SSFD3006 Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
2
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
100
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
50
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source breakdown
Min.
Typ.
Max.
Units
V
30
—
—
—
3.8
6
Static Drain-to-Source
—
6.4
—
on-resistance
— 4.9
8.5
— 7.2
—
1
1.5
3
—
1.21
—
Drain-to-Source leakage
—
—
1
current
—
—
50
Gate-to-Source forward
— — 100
-100
— —
voltage
Gate threshold voltage
leakage
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 15A
Qg
Total gate charge
— 35
—
Qgs
Gate-to-Source charge
— 8
—
Qgd
Gate-to-Drain("Miller") charge
— 18
—
td(on)
Turn-on delay time
— 12
—
tr
Rise time
— 63
—
td(off)
Turn-Off delay time
— 41
—
tf
Fall time
— 11
—
Ciss
Input capacitance
— 3833
—
Coss
Output capacitance
— 459
—
Crss
Reverse transfer capacitance
— 427
—
TJ = 125℃
mΩ
VGS=4.5V,ID =11.5A
TJ = 125℃
VDS = VGS, ID = 250μA
V
TJ = 125℃
VDS = 30V,VGS = 0V
μA
TJ = 125°C
VGS =20V
nA
VGS = -20V
ID = 32A,
VDS=15V,
nC
VGS =4.5V
VGS=4.5V, VDS=15V,
ns
RGEN=2Ω，ID = 32A,
VGS = 0V
VDS = 15V
pF
ƒ = 800kHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Maximum Body-Diode
Continuous Curren
Min.
Typ.
Max.
Units
—
—
90
A
Conditions
VSD
Diode Forward Voltage
—
0.72
1.2
V
IS=2.8A, VGS=0V
trr
Reverse Recovery Time
—
16
—
ns
TJ = 25°C, IF =30A,
Qrr
Reverse Recovery Charge
—
8.8
—
nC
di/dt = 150A/μs
©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com Version : 1.0
page 2 of 8
SSFD3006 Test circuits and Waveforms
Switch Waveforms:
Notes: ①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com Version : 1.0
page 3 of 8
SSFD3006 Typical electrical and thermal characteristics
ID - Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 6: Body-Diode Characteristics Normalized On-Resistance
Rdson On-Resistance (mohm)
ID- Drain Current (A)
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1: Typical Transfer Characteristics Vgs Gate-Source Voltage (V)
Figure 5: On-Resistance vs. Gate-Source Voltage VGS=10V
ID=15A
VGS=4.5V
ID=11.5A
T J -Junction Temperature(℃)
Figure 4: On-Resistance vs. Junction
Temperature TJ=175℃
TA=25 ℃
Vds Drain-Source Voltage (V)
Figure 5: Maximum Forward Biased Safe
Operating Area⑤ ©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com Version : 1.0
page 4 of 8
SSFD3006 Typical electrical and thermal characteristics
ZthJA Normalized Transient
Figure 6: Normalized Maximum Transient Thermal Impedance⑥
©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com Version : 1.0
page 5 of 8
SSFD3006 ©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com Version : 1.0
page 6 of 8
SSFD3006 Ordering
and Marking Information Device Marking: SSFD3006
Package (Available)
TO-252
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Option1：
Package Units/ Tubes/Inner
Type
Tube Box
TO-252
80
50
Units/Inner
Box
4000
Inner
Boxes/Carton
Box
10
Units/Carton
Box
Inner
Boxes/Carton
Box
7
Units/Carton
Box
Inner
Boxes/Carton
Box
10
Units/Carton
Box
40000
Option2：
Package Units/ Tapes/Inner
Type
Tape Box
TO-252
2500
2
Units/Inner
Box
5000
35000
Option3：
Package Units/ Tapes/Inner
Type
Tape Box
TO-252
2500
1
©Silikron Semiconductor CO.,LTD.
Units/Inner
Box
2500
2011.10.10
www.silikron.com Version : 1.0
25000
page 7 of 8
SSFD3006 ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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Worldwide Sales and Service:
[email protected]
Technical Support:
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©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com Version : 1.0
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