2SD1418 Silicon NPN Epitaxial REJ03G0787-0200 (Previous ADE-208-1149) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1025 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current iC(peak)*1 Collector power dissipation PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 Ratings 120 80 5 1 2 1 150 –55 to +150 Unit V V V A A W °C °C 2SD1418 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO 120 V(BR)CEO 80 V(BR)EBO 5 ICBO — hFE1*1 60 hFE2 30 Collector to emitter saturation voltage VCE(sat) — Base to emitter voltage VBE — Gain bandwidth product fT — Collector output capacitance Cob — Notes: 1. The 2SD1418 is grouped by hFE1 as follows. 2. Pulse test Mark DA DB DC hFE1 60 to 120 100 to 200 160 to 320 Rev.2.00 Aug 10, 2005 page 2 of 5 Typ — — — — — — — — 140 12 Max — — — 10 320 — 1 1.5 — — Unit V V V µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz 2SD1418 Main Characteristics Typical Output Characteristics 1.0 1.2 Collector Current IC (A) Collector Power Dissipation PC (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 0.8 0.4 0.8 10 0.6 5 0.4 2 1 0.2 0.5 mA IB = 0 50 0 100 150 2 0 Ambient Temperature Ta (°C) 6 8 10 DC Current Transfer Ratio vs. Collector Current 300 500 DC Current Transfer Ratio hFE VCE = 5 V 200 Ta = 75 °C 25 –2 5 100 50 20 10 5 2 1 VCE = 5 V 250 Ta = 75 200 25 150 –25 °C 100 50 0 0 0.2 0.4 0.6 0.8 1 1.0 Saturation Voltage vs. Collector Current 1.0 0.5 0.8 0.4 V BE(sat) 0.6 0.3 0.4 0.2 0.2 0.1 VCE(sat) 0 1 3 10 30 100 300 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 30 100 300 1,000 0 1,000 240 Gain Bandwidth Product fT (MHz) 0.6 IC = 10 IB Pulse 10 Gain Bandwidth Product vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 1.2 3 Collector Current IC (mA) Base to Emitter Voltage VBE (V) Base to Emitter Saturation Voltage VBE(sat) (V) 4 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector Current IC (mA) 35 30 25 20 15 200 VCE = 5 V Pulse 160 120 80 40 0 10 30 100 300 Collector Current IC (mA) 1,000 2SD1418 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SD1418 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SD1418DATR-E 2SD1418DBTR-E 2SD1418DCTR-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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