SSF1020
Feathers:
ID =60A
Advanced trench process technology
Ultra low Rdson, typical 16mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
BV=100V
Rdson=16mΩ（Typ.）
Description:
The SSF1020 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1020 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF1020 TOP View (TO220)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
60
ID@Tc=100ْC
Continuous drain current,VGS@10V
50
IDM
Pulsed drain current
①
Units
A
240
Power dissipation
180
W
Linear derating factor
2.0
W/ C
ْ
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
240
mJ
EAR
Repetitive avalanche energy
TBD
TJ
Operating Junction and
TSTG
Storage Temperature Range
PD@TC=25ْC
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.83
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
BVDSS
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
16
20
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
3.0
4.0
V
VDS=VGS,ID=250μA
gfs
Forward transconductance
—
58
—
S
VDS=5V,ID=30A
IDSS
Drain-to-Source leakage current
—
—
1
—
—
10
©Silikron Semiconductor Corporation
2009.12.13
Max. Units
μA
Test Conditions
VDS=100V,VGS=0V
VDS=100V, VGS=0V, TJ=150ْC
Version: 2.2
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SSF1020
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
90
—
Qgs
Gate-to-Source charge
—
14
—
Qgd
Gate-to-Drain("Miller") charge
—
24
—
VGS=10V
td(on)
Turn-on delay time
—
18.2
—
VDD=30V
tr
Rise time
—
15.6
—
td(off)
Turn-Off delay time
—
70.5
—
tf
Fall time
—
13.8
—
VGS=10V
Ciss
Input capacitance
—
3150
—
VGS=0V
Coss
Output capacitance
—
300
—
Reverse transfer capacitance
—
240
—
IGSS
Crss
VGS=20V
nA
VGS=-20V
ID=30A
nC
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
①
Min.
Typ.
Max.
—
—
60
Units
MOSFET symbol
A
—
—
240
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
trr
Reverse Recovery Time
—
57
—
nS
Qrr
Reverse Recovery Charge
—
107
—
nC
ton
Forward Turn-on Time
TJ=25ْC,IS=30A,VGS=0V
③
TJ=25ْC,IF=60A
di/dt=100A/μs
③
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 40A, VDD = 50V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
Gate charge test circuit
EAS test circuit
BV dss
V dd
L
Vgs
RL
RG
VDD
1mA
©Silikron Semiconductor Corporation
2009.12.13
RG
Version: 2.2
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SSF1020
Switch Time Test Circuit：
Switch Waveforms:
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
©Silikron Semiconductor Corporation
2009.12.13
Version: 2.2
page
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SSF1020
Source-Drain Diode Forward Voltage
Gate Charge
Max Drain Current vs. Junction Temperature
Safe Operation Area
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2009.12.13
Version: 2.2
page
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SSF1020
TO220 MECHANICAL DATA:
©Silikron Semiconductor Corporation
2009.12.13
Version: 2.2
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5of5