Datasheet - Silikron

SSF1016
Feathers:
ID =75A

Advanced trench process technology

avalanche energy, 100% test

Fully characterized avalanche voltage and current
BV=100V
Rdson=16mΩ (Max.)
Description:
The SSF1016 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1016 is assembled
in high reliability and qualified assembly house.
Application:

Power switching application
SSF1016 TOP View (T0-220)
Absolute Maximum Ratings
Parameter
Max.
[email protected]=25 ْC
Continuous drain current,[email protected]
75
[email protected]=100ْC
Continuous drain current,[email protected]
65
IDM
Pulsed drain current
①
Units
A
300
Power dissipation
273
W
Linear derating factor
1.5
W/ C
ْ
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
380
mJ
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
31
v/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
–55 to +175
ْC
[email protected]=25ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.55
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
11
16
mΩ
VGS=10V,ID=30A
VGS(th)
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Gate threshold voltage
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2009.8.10
Max. Units
Test Conditions
VDS=100V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version:2.2
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SSF1016
Qg
Total gate charge
—
90
Qgs
Gate-to-Source charge
—
20
—
Qgd
Gate-to-Drain("Miller") charge
—
31
—
td(on)
Turn-on delay time
—
18.2
tr
Rise time
—
15.6
td(off)
Turn-Off delay time
—
70.5
tf
Fall time
—
13.8
VGS=10V
Ciss
Input capacitance
—
3150
VGS=0V
Coss
Output capacitance
—
350
Crss
Reverse transfer capacitance
—
240
ID=30A,VGS=10V
nC
VDD=30V
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
①
Min.
Typ.
Max.
—
—
75
Units
MOSFET symbol
A
—
—
300
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
trr
Reverse Recovery Time
-
57
—
nS
Qrr
Reverse Recovery Charge
-
107
—
μC
ton
Forward Turn-on Time
TJ=25ْC,IS=60A,VGS=0V
③
TJ=25ْC,IF=75A
di/dt=100A/μs
③
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 50V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
EAS Test Circuit:
BV dss
Gate Charge Test Circuit:
V dd
L
Vgs
RL
RG
VDD
1mA
©Silikron Semiconductor Corporation
2009.8.10
RG
Version:2.2
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SSF1016
Switch Time Test Circuit:
Switch Waveform:
Capacitance
Transfer Characteristic
On Resistance vs. Junction Temperature
©Silikron Semiconductor Corporation
Breakdown Voltage vs. Junction Temperature
2009.8.10
Version:2.2
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SSF1016
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction
Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2009.8.10
Version:2.2
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SSF1016
TO-220 MECHANICAL DATA:
©Silikron Semiconductor Corporation
2009.8.10
Version:2.2
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