Datasheet - Silikron

 SSTS2065/SSTS2065F
Main Product Characteristics:
IF
20A
VRRM
80V
Tj(max)
150℃
Vf(max)
0.7V
Schematic Diagram
TO220
TO220F
SSTS2065
SSTS2065F
Features and Benefits:
„
„
„
High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
80
V
RMS Reverse Voltage
56
V
IF(AV)
Average Forward Current
20
A
IFSM
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
180
A
IRRM
Peak Repetitive Reverse Surge Current(Tp=2us)
2
A
TJ
Maximum operation Junction Temperature Range
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
Value
Unit
TO220
2
℃/W
TO220F
4
℃/W
VRRM
VR(RMS)
Characterizes
Thermal Resistance
Symbol
RθJC
RθJC
Characterizes
Maximum Thermal Resistance Junction To
Case(per leg)
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
VR
Characterizes
Min
Reverse Breakdown Voltage
Typ
Max
80
Unit
V
Forward Voltage Drop
0.72
V
©Silikron Semiconductor CO., LTD.
0.2
Leakage Current
20
2011.5.26
www.silikron.com IF=20A, TJ=25℃
IF=20A, TJ=125℃
0.7
IR
IR=0.5mA
IF=10A, TJ=25℃
0.65
VF
Test Condition
mA
Version: 1.0
VR=80V, TJ=25℃
VR=80V, TJ=125℃
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SSTS2065/SSTS2065F
I-V Curves:
Figure 1:Typical Forward Characteristics
Figure 2:Typical Capacitance Characteristics
Figure 3:Typical Reverse Characteristics
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com Version: 1.0
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SSTS2065/SSTS2065F
Mechanical Data:
TO220:
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com Version: 1.0
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SSTS2065/SSTS2065F
TO220F:
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com Version: 1.0
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SSTS2065/SSTS2065F
Ordering and Marking Information
Device Marking: SSTS2065&SSTS2065F
Package (Available)
TO-220&TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Packag Units/ Tubes/Inne Units/Inne
e Type Tube r
r
Box
Box
50
20
1000
TO220
20
1000
TO220F 50
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
©Silikron Semiconductor CO., LTD.
Inner
Boxes/Carton
Box
Units/Carto
n
Box
6
6000
6
6000
Duration
Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
2011.5.26
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SSTS2065/SSTS2065F
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com Version: 1.0
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