SSFN2569
Main Product Characteristics:
VDSS
-20V
RDS(on)
55mΩ (typ.)
ID
-3.4A
D1
G1
G2
S1
Bottom View
Features and Benefits:
S2
Schematic diagram
DFN 3x2-8L
D2
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
-3.4
IDM
Pulsed Drain Current②
-17
Power Dissipation③
1.7
W
Linear Derating Factor
0.014
W/°C
VDS
Drain-Source Voltage
-20
V
VGS
Gate-to-Source Voltage
±8
V
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
Units
A
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
74
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
60
℃/W
©Silikron Semiconductor CO., LTD.
2013.06.07
www.silikron.com
Version: 1.0
page 1 of 6
SSFN2569
Electrical Characterizes @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
-20
—
—
V
—
55
80
—
78
105
-0.45
—
-1.0
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
6.5
—
Qgs
Gate-to-Source charge
—
1.1
—
Qgd
Gate-to-Drain("Miller") charge
—
2.2
—
td(on)
Turn-on delay time
—
4.7
—
tr
Rise time
—
10
—
td(off)
Turn-Off delay time
—
28
—
tf
Fall time
—
20
—
Ciss
Input capacitance
—
645
—
Coss
Output capacitance
—
86
—
Crss
Reverse transfer capacitance
—
38
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = -250μA
VGS=-4.5V,ID = -2.9A
VGS=-2.5V,ID = -2.2A
VDS = VGS, ID = -250μA
VDS = -20V,VGS = 0V
TJ = 125℃
VGS =8V
VGS = -8V
ID =-2.6A,
nC
VDS=-16V,
VGS =-4.5V
ns
VGS=-4.5V, VDS=-16V,
ID = -2.6A,RGEN=2Ω
VGS = 0V
pF
VDS = -16V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
-3.4
A
—
—
-17
A
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
VSD
Diode Forward Voltage
—
—
-1.2
V
IS=-1.1A, VGS=0V
trr
Reverse Recovery Time
—
17
—
ns
TJ = 25°C, IF =1A,
Qrr
Reverse Recovery Charge
—
8.6
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO., LTD.
2013.06.07
www.silikron.com
Version: 1.0
page 2 of 6
S
SSFN2569
Test circuits and Waveforms
EAS test circuit:
Gate charge test circuit:
S
Switching time test circuit:
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO., LTD.
2013.06.07
www.silikron.com
Version: 1.0
page 3 of 6
SSFN2569
Mechanical Data：
DFN 3X2_8L PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A3
D
E
b
L
e
Dimension In Millimeters
Nom
Max
0.750
0.800
0.050
0.200REF
2.950
3.000
3.050
1.950
2.000
2.050
0.250
0.300
0.350
0.280
0.350
0.420
0.650BSC
Min
0.700
0.000
©Silikron Semiconductor CO., LTD.
Min
0.028
0.000
0.116
0.077
0.010
0.016
2013.06.07
www.silikron.com
Dimension In Inches
Nom
0.030
0.008REF
0.118
0.079
0.012
0.014
0.026BSC
Version: 1.0
Max
0.031
0.002
0.120
0.081
0.014
0.017
page 4 of 6
SSFN2569
Ordering and Marking Information
Device Marking: SSFN2569
Package (Available)
DFN3X2-8L
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/ Tapes/Inner
Tape Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
DFN3X2-8L
3000
15000
60000
5
4
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ or 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2013.06.07
www.silikron.com
Version: 1.0
page 5 of 6
SSFN2569
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
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E-mail: [email protected]
©Silikron Semiconductor CO., LTD.
2013.06.07
www.silikron.com
Version: 1.0
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