Datasheet - Silikron

SSTS30100CT/CTF
Main Product Characteristics:
IF
2×15A
VRRM
100V
Tj(max)
150℃
Vf(typ)
0.64V
Features and Benefits:



TO220
TO220F
SSTS30100CT
SSTS30100CTF
Schematic Diagram
High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
VRRM
VR(RMS)
Characterizes
Value
Unit
Peak Repetitive Reverse Voltage
100
V
RMS Reverse Voltage
70
V
Per diode
15
A
Per device
30
A
IF(AV)
Average Forward Current
IFSM
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
200
A
IRRM
Peak Repetitive Reverse Surge Current(Tp=2us)
0.5
A
TJ
Maximum operation Junction Temperature Range
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
Value
Unit
TO220
2.3
℃/W
TO220F
5.3
℃/W
Thermal Resistance
Symbol
RθJC
RθJC
Characterizes
Maximum Thermal Resistance Junction To
Case(per leg)
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
VR
VF
Characterizes
Min
Reverse Breakdown Voltage
Typ
100
0.5
V
IF=5A, TJ=25℃
0.55
V
IF=7.5A, TJ=25℃
0.61
V
IF=10A, TJ=25℃
V
IF=15A, TJ=25℃
0.45
V
IF=5A, TJ=125℃
0.52
V
IF=7.5A, TJ=125℃
0.57
V
IF=10A, TJ=125℃
V
IF=15A, TJ=125℃
©Silikron Semiconductor CO., LTD.
0.8
0.7
0.1
Leakage Current
20
2013.4.23
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Test Condition
IR=0.5mA
0.7
Forward Voltage Drop
Unit
V
0.64
IR
Max
mA
Version: 2.3
VR=100V, TJ=25℃
VR=100V, TJ=125℃
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SSTS30100CT/CTF
I-V Curves:
Figure 1:Typical Forward Characteristics
Figure 3:Typical Reverse Characteristics
©Silikron Semiconductor CO., LTD.
2013.4.23
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Figure 2:Typical Capacitance Characteristics
Figure 4:Forward Current Derating Curve
Version: 2.3
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SSTS30100CT/CTF
Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.518
0.526
0.534
0.29REF
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
2.900
1.650
3.000
1.750
3.100
1.850
0.114
0.065
0.118
0.069
0.122
0.073
L4
0.900
1.000
1.100
0.035
0.039
0.043
Q1
50
70
90
50
70
90
Q2
Q3
0
5
50
0
7
70
0
9
90
0
5
50
0
7
70
90
90
Q4
10
30
50
10
30
50
©Silikron Semiconductor CO., LTD.
2013.4.23
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Version: 2.3
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SSTS30100CT/CTF
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP1
ФP2
ФP3
L
L1
L2
Q1
Q2
b1
b2
b3
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
0.500
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
0.100
12.780
2.970
0.830
3o
43o
1.180
0.760
-
©Silikron Semiconductor CO., LTD.
1.000
0.200
12.980
3.170
0.930
5o
45o
1.280
0.800
-
1.100
0.300
13.180
3.370
1.030
7o
47o
1.380
0.840
1.420
2013.4.23
www.silikron.com
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.121
0.125
0.055
0.059
Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
0.621
0.353
0.256
0.035
0.004
0.503
0.117
0.033
3o
43o
0.046
0.030
-
Version: 2.3
0.039
0.008
0.511
0.125
0.037
5o
45o
0.050
0.031
-
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
7o
47o
0.054
0.033
0.056
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SSTS30100CT/CTF
Ordering and Marking Information
Device Marking: SSTS30100CT&SSTS30100CTF
Package (Available)
TO-220&TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
TO220
TO220F
Units/ Tubes/Inner
Tube Box
Units/Inner
Box
Inner Boxes /
Carton Box
Units/
Carton Box
50
20
1000
6
6000
50
20
1000
6
6000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2013.4.23
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Version: 2.3
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SSTS30100CT/CTF
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
Sales@silikron.com
Technical Support:
Technical@silikron.com
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: Sales@silikron.com
©Silikron Semiconductor CO., LTD.
2013.4.23
www.silikron.com
Version: 2.3
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