UD6001 P-Ch 60V Fast Switching MOSFETs General Description Product Summery The UD6001 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD6001 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -60V 110mΩ -11.5A Applications z Power management in half bridge and inverters z DC-DC Converter z LCD / LED Backlight Application Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V 1 -11.5 A 1 -8.9 A -23 A ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 29 mJ IAS Avalanche Current -20 A 4 PD@TC=25℃ Total Power Dissipation 16 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 1 1 Max. Unit --- 62 ℃/W --- 5 ℃/W UD6001 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.049 --- V/℃ VGS=-10V , ID=-8A --- 98 110 VGS=-4.5V , ID=-6A --- 140 160 -2.5 V --- 5.42 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=150℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-5A --- 5.8 --- S Qg Total Gate Charge (-4.5V) --- 5.85 --- Qgs Gate-Source Charge --- 2.92 --- Qgd Gate-Drain Charge --- 1.8 --- --- 10 --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Td(on) VGS=VDS , ID =-250uA VDS=-20V , VGS=-4.5V , ID=-5A Turn-On Delay Time -1.0 mΩ uA nC Rise Time VDD=-12V , VGS=-10V , RG=3.3Ω, --- 17 --- Turn-Off Delay Time ID=-5A --- 22 --- Fall Time --- 21 --- Ciss Input Capacitance --- 715 --- Coss Output Capacitance --- 51 --- Crss Reverse Transfer Capacitance --- 34 --- Min. Typ. Max. Unit 8 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf VDS=-15V , VGS=0V , F=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -11.5 A --- --- -23 A --- --- -1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-20A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD6001 P-Ch 60V Fast Switching MOSFETs P-Channel Typical Characteristics 8 215 6 180 VGS=-10V VGS=-7V 4 VGS=-4.5V RDSON (mΩ) -ID Drain Current (A) ID=-5A VGS=-5V 145 VGS=-4V 2 110 0 0 0.5 1 1.5 75 2 2 -VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 10 -VGS Gate to Source Voltage (V) 8 -IS Source Current(A) 6 8 -VGS (V) 10 Fig.2 On-Resistance vs. G-S Voltage 10 VDS=-12V ID =-5A 7.5 TJ=150℃ TJ=25℃ 6 4 5 2.5 2 0 0 0.2 0.4 0.6 0.8 1 0 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse 3.5 7 10.5 QG , Total Gate Charge (nC) 14 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.8 1.4 Normalized -VGS(th) 4 1.5 1 1.0 0.6 0.5 0.2 -50 0 50 100 TJ ,Junction Temperature (℃) -50 150 Fig.5 Normalized VGS(th) vs. TJ 25 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 175 UD6001 P-Ch 60V Fast Switching MOSFETs 1000 100 Ciss 10us 100us -ID (A) Capatince (pF) 10 100 Coss 1 10ms 100ms Crss F=1.0MHz 0 10 1 5 DC TC=25℃ Single Pulse 9 13 -VDS (V) 17 21 0.1 25 1 10 100 1000 -VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC ) 1 DUTY=0.5 0.2 0.1 0.1 0.05 PDM 0.02 T D = TON/T TJpeak = TC + PDM x RθJC 0.01 SINGLE PULSE 0.01 0.00001 TON 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 4 10