PH10 TECHNOLOGY The new UMS 0.1µm GaAs Very High Frequency pHEMT Process UMS is now pleased to extend its foundry offer with the opening of 0.1µm High Frequency GaAs pHEMT process. PH10 process is optimised for low noise amplification up to 110GHz with a typical Ft of 130GHz, a power density above 250mW/mm at 2.5V and a typical noise figure of 2.3dB @ 70GHz. It includes two metal interconnect layers, precision TaN resistors, high values TiWSi resistors, MIM capacitors, air-bridges, via-holes and gold plated back side. PH10 is available with BCB encapsulation. PH10 offers a very wide range of applications among them: • E-Band point-to-point communication • W-Band radar • Fiber Optics • Security sensors • Space instrumentation •… Process main characteristics Element FET Parameter Resistor Substrate Condition Idss (mA/mm) 280 Vds=2.0V, Gm_max Gm_max (mS/mm) 725 Vds=2.0V, Gm_max Vbds (V) MIM Capacitor Typical Value 6 Ids= Idss/100 Noise Figure (dB) 2.3 @ 70GHz Density (pF/mm2) 330 @ 1MHz 30 Ohms/sq TiWSI TaN 1000 Ohms/sq GaAs 120 Ohms/sq Thickness 70 µm Typical UMS product references are: • LNA 71-86GHz: CHA2080-98F • MPA 71-76GHz: CHA3080-98F • MPA 81-86GHz: CHA3090-98F UMS 2012/2013 - Printed on PEFC paper - Smith Corporate : 01 69 59 11 30 www.ums-gaas.com Contact us: UMS SAS - North Europe, Ph: +33 1 69 86 32 00 e-mail: [email protected] UMS GmbH - Germany, Ph: +49 731 505 30 80 e-mail: [email protected] UMS USA, Inc. - America, Ph: +1 978 905 3162 e-mail: [email protected] UMS SAS - South Europe, Ph: +39 0765 480 434 e-mail: [email protected] UMS - Asia, Ph: +86 21 6103 1703 e-mail: [email protected] Worlwide distributor: Richardson RFPD, Inc. – www.richardsonrfpd.com