BES TECHNOLOGY This UMS unique Schottky Diode process is space evaluated UMS is offering a unique MMIC Schottky Diode process in open foundry mode optimised for very high frequency applications up to several hundreds of GHz with a typical Ft of 3THz. Notably, BES is particularly suited to the emerging E-band market. This process is fully optical and offers two metal interconnect layers, precision TaN resistors, high values TiWSi resistors, MIM capacitors, air-bridges and backside via-holes. Applications: • Very High Frequency Mixers • Very High Frequency Switches • Very High Frequency Multipliers • E-band Radio. 5µm finger BES Schottky Diode Main characteristics Element Diode (1x5µm) Parameter Typical Value Condition Ideality Factor n 1.15 Jo (A/cm2) 3e-6 Rs (Ohm) 5 Idiode= 15 mA Vbd (V) -7 Idiode= -20 µA Von (V) 0.6 Idiode= 20 µA MIM Cap. Density (pF/mm2) 330 @ 1MHz TaN Resistor Sheet Resistance 30 Ohms/sq TiWSi Resistor Sheet Resistance 1000 Ohms/sq GaAs Resistor Sheet Resistance 9 Ohms/sq Substrate Thickness 100 Vdiode= 0.55 V µm UMS 2011/2012 - Printed on PEFC paper - Smith Corporate : 01 69 59 11 30 www.ums-gaas.com Contact us: UMS SAS - North Europe, Ph: +33 1 69 33 02 26 e-mail: [email protected] UMS GmbH - Germany, Ph: +49 731 505 30 80 e-mail: [email protected] UMS USA, Inc. - America, Ph: +1 978 905 3162 e-mail: [email protected] UMS SAS - South Europe, Ph: +39 0765 480 434 e-mail: [email protected] UMS - Asia, Ph: +86 21 6103 1703 e-mail: [email protected] Worlwide distributor: Richardson RFPD, Inc. – www.richardsonrfpd.com