RENESAS CR12CM

Preliminary Datasheet
CR12CM-12B
R07DS0232EJ0300
Rev.3.00
Jul 30, 2013
600V - 12A - Thyristor
Medium Power Use
Features
• IT (AV) : 12 A
• VDRM : 600 V
• IGT : 30 mA
• The product guaranteed maximum junction
temperature of 150°C
• Non-Insulated Type
• Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
RENESAS Package code: PRSS0004AA-A
A
(Package name: TO-220)
4
4
2, 4
3
1
2
12
3
1
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
R07DS0232EJ0300 Rev.3.00
Jul 30, 2013
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Page 1 of 8
CR12CM-12B
Preliminary
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
IT (RMS)
IT (AV)
Ratings
18.8
12
Unit
A
A
ITSM
360
A
I2t
544
A2 s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
5
0.5
6
10
2
– 40 to +150
– 40 to +150
2.1
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
Note2
180° conduction, Tc = 116°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
—
Typ.
—
Max.
2.0/5.0
Unit
mA
Test conditions
Tj = 125°C/150°C, VRRM applied
Repetitive peak off-state current
On-state voltage
IDRM
VTM
—
—
—
—
2.0/5.0
1.6
mA
V
Tj = 125°C/150°C, VDRM applied
Gate trigger voltage
Gate non-trigger voltage
VGT
—
—
1.5
V
VGD
0.2/0.1
—
—
V
IGT
IH
Rth (j-c)
—
—
—
—
15
—
30
—
1.2
mA
mA
°C/W
Gate trigger current
Holding current
Thermal resistance
Tc = 25°C, ITM = 40 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 125°C/150°C,
VD = 1/2 VDRM
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Junction to caseNote1 Note2
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
2. Case temperature is measured at anode tab 1.5 mm away from the molded case.
R07DS0232EJ0300 Rev.3.00
Jul 30, 2013
Page 2 of 8
CR12CM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
400
Surge On-State Current (A)
102
101
1.2
1.6
2.0
2.4
2.8
Gate Voltage (V)
101
102
× 100 (%)
Gate Trigger Current vs.
Junction Temperature
PGM = 5 W
VFGM = 6 V
PG(AV) =
0.5 W
IFGM
=2A
IGT = 30 mA
VGD = 0.1 V
10–2
101
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
80
Gate Characteristics
10–1
102
103
104
103
Typical Example
102
101
100
–40
0
40
80
160
120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
100
–40
160
Conduction Time (Cycles at 60Hz)
VGT = 1.5 V
100
240
On-State Voltage (V)
102
101
320
0
100
3.2
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
100
0.8
0
40
80
120
Junction Temperature (°C)
R07DS0232EJ0300 Rev.3.00
Jul 30, 2013
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tc = 25°C
101
100
10-1
10-2
10-4
10-3
10-2
10-1
Time (s)
Page 3 of 8
CR12CM-12B
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
56
θ
48
360°
120°
90°
Resistive,
40 inductive loads
Case Temperature (°C)
Average Power Dissipation (W)
64
180°
60°
32
24
θ = 30°
16
0
4
8
12
16
20
24
28
60
60° 120°
40
θ = 30°
0
3
90° 180°
6
9
12
15
18
21
24
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
64
Resistive,
inductive loads
Natural
convection
120
Average Power Dissipation (W)
Ambient Temperature (°C)
80
Average On-State Current (A)
θ
360°
100
80
120°
θ = 30°
180°
60°
60
90°
40
20
0
56
120° 180°
48
90°
40
60°
32
θ = 30°
24
16
θ
θ
360°
8
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Resistive loads
0
4
8
12
16
20
24
28
32
Average On-State Current (A)
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
140
θ
120
θ
360°
Resistive loads
100
80
60
60° 120°
40
θ = 30°
20
0
4
8
90° 180°
12
16
20
24
28
Average On-State Current (A)
R07DS0232EJ0300 Rev.3.00
Jul 30, 2013
32
Ambient Temperature (°C)
160
Case Temperature (°C)
Resistive,
inductive loads
100
Average On-State Current (A)
140
0
360°
0
32
160
0
θ
120
20
6
0
140
Resistive loads
Natural convection
140
120
θ
θ
360°
100
180°
120°
80
θ = 30°
60
60°
90°
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
Page 4 of 8
CR12CM-12B
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
Maximum Average Power Dissipation
(Rectangular Wave)
160
56
140
48
Case Temperature (°C)
θ
360°
40 Resistive,
inductive loads
180° 270°
32
120°
90°
DC
60°
24
θ = 30°
16
8
0
4
8
12
20
16
24
28
80
θ = 30° 90° 180°
60
DC
60° 120° 270°
40
0
4
8
12
16
20
24
28
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Breakover Voltage vs.
Junction Temperature
× 100 (%)
Average On-State Current (A)
Resistive,
inductive loads
Natural convection
140
θ
360°
120
100
DC
270°
80
θ = 30°
60
180°
60°
90°
40
120°
20
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Ambient Temperature (°C)
× 100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
Resistive,
inductive
loads
Average On-State Current (A)
160
0
360°
100
0
32
103
32
Typical Example
102
101
–40
0
40
80
120
160
Average On-State Current (A)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 125°C
140
120
100
80
60
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0232EJ0300 Rev.3.00
Jul 30, 2013
× 100 (%)
0
θ
120
20
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
Average Power Dissipation (W)
64
160
Typical Example
Tj = 150°C
140
120
100
80
60
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Page 5 of 8
Preliminary
Holding Current vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
× 100 (%)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
× 100 (%)
CR12CM-12B
103
Typical Example
102
101
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
× 100 (%)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
102
101
10−1
100
101
102
Gate Current Pulse Width (μs)
R07DS0232EJ0300 Rev.3.00
Jul 30, 2013
Page 6 of 8
CR12CM-12B
Preliminary
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AG-A
Previous Code
TO-220ABS
MASS[Typ.]
2.1g
Unit: mm
4.5 ± 0.2
2.8 ± 0.1
Package Name
TO-220AB
9.9 ± 0.2
+ 0.10
φ3.6 ± 0.2
13.08 ± 0.20
(3.00)
9.2 ± 0.2
15.7 ± 0.2
1.30 – 0.05
1.62 Max
0.80 ± 0.10
2.6 Max
2.54
2.54
+ 0.10
0.50 – 0.05
10.0 ± 0.2
Package Name
TO-220
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AA-A
Previous Code
⎯
MASS[Typ.]
2.0g
10.5Max
Unit: mm
4.5
φ3.6
3.8Max
12.5Min
16Max
7.0
3.2
1.3
1.0
0.8
0.5
2.54
2.6
4.5Max
2.54
2
R07DS0232EJ0300 Rev.3.00
Jul 30, 2013
Page 7 of 8
CR12CM-12B
Preliminary
Ordering Information
Orderable Part Number
CR12CM-12B#BB0
CR12CM-12B-A8#BB0
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS0232EJ0300 Rev.3.00
Jul 30, 2013
Page 8 of 8
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Colophon 2.2