CR05BS-8 Thyristor Low Power Use REJ03G0544-0100 Rev.1.00 Mar.01.2005 Features • IT (AV) : 0.1 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type • Completed Pb free product Outline PRSS0004ZA-A (Package name: MPAK) 2 2 1 3 1. Cathode 2. Anode 3. Gate 3 1 Applications Strobe flasher Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.1.00, Mar.01.2005, page 1 of 3 Symbol Voltage class 8 Unit VRRM VRSM VR(DC) VDRM VD(DC) 400 500 320 400 320 V V V V V CR05BS-8 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) Ratings 0.15 0.1 Unit A A ITSM 10 A I2 t 0.4 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 0.1 0.01 6 6 0.1 – 40 to +125 – 40 to +125 11 W W V V A °C °C mg Conditions Commercial frequency, sine half wave 180° conduction, Ta = 55°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 kΩ. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current Symbol IRRM IDRM Min. — — Typ. — — Max. 0.1 0.1 Unit mA mA On-state voltage VTM — — 1.9 V Gate trigger voltage Gate non-trigger voltage VGT VGD — 0.2 — — 0.8 — V V Gate trigger current Holding current IGT IH 20 — — — 100 3.0 µA mA Thermal resistance Rth (j-a) — — 500 °C/W Rev.1.00, Mar.01.2005, page 2 of 3 Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied, RGK = 1 kΩ Ta = 25°C, ITM = 1.5 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 25°C, VD = 12 V, RGK = 1 kΩ Junction to ambient CR05BS-8 Package Dimensions JEITA Package Code RENESAS Code Previous Code MASS[Typ.] MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A SC-59A D 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 3000 Type name – ET +Direction (1 or 2) +3 Note : Please confirm the specification about the shipping in detail. Rev.1.00, Mar.01.2005, page 3 of 3 Standard order code example CR05BS-8-ET13 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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