Preliminary Datasheet RJH60D5DPM Silicon N Channel IGBT Application: Inverter R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate 2. Collector 3. Emitter G E 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC Note1 ic(peak) IDF iDF(peak) Note1 Note2 PC j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 75 Unit V V A 37 150 30 120 45 2.78 3.95 150 –55 to +150 A A A A W °C/ W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 Page 1 of 7 RJH60D5DPM Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol ICES / IR Min — Typ — Max 5 Unit A — 4.0 — — — — — — — — — — — — 3.0 — — 1.6 2.0 1900 120 60 78 12 36 50 35 130 50 5.0 ±1 6.0 2.2 — — — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns ns s VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 37 A, VGE = 15 V Note3 IC =75 A, VGE = 15 V Note3 Short circuit withstand time IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc FRD Forward voltage FRD reverse recovery time VF trr — — 1.4 100 1.9 — V ns IF = 30 A Note3 Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Test Conditions VCE = 600 V, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 37 A VCC = 300 V, VGE = 15 V IC = 37 A Rg = 5 Inductive load VCC 360 V, VGE = 15 V IF = 30 A diF/dt = 100 A/s Notes: 3. Pulse test. R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 Page 2 of 7 RJH60D5DPM Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 100 Collector Current IC (A) Collector Dissipation Pc (W) 50 40 30 20 10 0 25 50 75 40 20 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 200 PW 100 10 0μ = 10 s Collector Current IC (A) 1000 Collector Current IC (A) 60 0 0 μs 10 1 0.1 1 160 120 80 40 Tc = 25°C Single pulse 0 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 150 150 Ta = 25°C Pulse Test 125 15 V 10 V 100 18 V 75 50 VGE = 8 V 25 0 12 V Ta = 150°C Pulse Test 12 V Collector Current IC (A) Collector Current IC (A) 80 125 15 V 100 10 V 18 V 75 50 VGE = 8 V 25 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 7 Preliminary Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 8 Ta = 25°C Pulse Test 6 IC = 37 A 75 A 4 2 0 0 4 8 12 16 20 Collector to Emitter Satularion Voltage VCE(sat) (V) Collector to Emitter Satularion Voltage VCE(sat) (V) RJH60D5DPM Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 8 Ta = 150°C Pulse Test 6 IC = 37 A 75 A 4 2 0 0 Gate to Emitter Voltage VGE (V) 12 16 20 Diode Forward Characteristics (Typical) 150 120 125 Forward Current IF (A) Collector Current IC (A) 8 Gate to Emitter Voltage VGE (V) Transfer Characteristics (Typical) Ta = 25°C 150°C 100 75 50 25 0 4 VCE = 10 V Pulse Test 0 4 8 12 16 Gate to Emitter Voltage VGE (V) R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 100 Ta = 25°C 150°C 80 60 40 20 VCE = 0 V Pulse Test 0 0 1 2 3 4 Forward Voltege VF (V) Page 4 of 7 RJH60D5DPM Preliminary Switching Characteristics (Typical) (1) 100000 Swithing Energy Losses E (μJ) Switching Times t (ns) 1000 Switching Characteristics (Typical) (2) td(off) 100 tf td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C 1 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C 10000 1000 Eoff 100 Eon 10 10 1 100 200 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 10000 VCC = 300 V, VGE = 15 V IC = 37 A, Ta = 25°C Swithing Energy Losses E (μJ) Switching Times t (ns) 100 200 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) 1000 10 td(off) 100 td(on) tf tr 10 VCC = 300 V, VGE = 15 V IC = 37 A, Ta = 25°C 1000 Eon Eoff 100 2 5 10 20 Gate Registance Rg (Ω) (Inductive load) R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 50 2 5 10 20 50 Gate Registance Rg (Ω) (Inductive load) Page 5 of 7 RJH60D5DPM Preliminary Thermal Impedance θj – c (°C/W) Thermal Impedance vs. Pulse Width (IGBT) 10 1 0.1 Tc = 25°C Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 Pulse Width PW (s) Thermal Impedance θj – c (°C/W) Thermal Impedance vs. Pulse Width (Diode) 10 1 0.1 Tc = 25°C Single pulse 100 μ 1m 10 m 100 m 1 10 100 1000 Pulse Width PW (s) Switching Time Test Circuit Waveform 90% Diode clamp/ D.U.T Vin L 10% 90% Rg D.U.T/ Driver VCC Ic tr ton R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 10% 10% td(on) 90% td(off) tf toff Page 6 of 7 RJH60D5DPM Preliminary Package Dimension Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 4.0 ± 0.3 2.6 0.86 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 1.6 0.86 0.66 5.45 ± 0.5 MASS[Typ.] 5.2g + 0.2 – 0.1 21.0 ± 0.5 RENESAS Code PRSS0003ZA-A 5.0 ± 0.3 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM 0.2 0.9 +– 0.1 5.45 ± 0.5 Ordering Information Orderable Part Number RJH60D5DPM-00-T1 R07DS0174EJ0100 Rev.1.00 Nov 15, 2010 Quantity 360 pcs Shipping Container Box (Tube) Page 7 of 7 Notice 1. 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