Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 (Previous: REJ03G1497-0100) Rev.2.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A) • Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 G 1 1. Source 2. Gate 3. Drain 2 S 1 Notes: Marking is “KG“. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS Ratings 60 ±12 Unit V V ID 1.5 6 1.5 0.8 150 –55 to +150 A A A W °C °C Note1 ID(pulse) IDR Pch Note2 Tch Tstg Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) R07DS0310EJ0200 Rev.2.00 Mar 28, 2011 Page 1 of 7 RQK0606KGDQA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Min 60 +12 –12 — — — 0.4 — — 2.3 — — — — — — — Typ — — — — — — — 173 207 4 200 25 14 11 27 31 4 Max — — — +10 –10 1 1.4 225 290 — — — — — — — — Unit V V V μA μA μA V mΩ mΩ S pF pF pF ns ns ns ns Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Qg Qgs Qgd VDF — — — — 2.2 0.4 0.7 0.8 — — — — nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = +100 μA, VDS = 0 IG = –100 μA, VDS = 0 VGS = +10 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.8 A, VGS = 4.5 V Note3 ID = 0.8 A, VGS = 2.5 V Note3 ID = 0.8 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz ID = 0.8 A VGS = 10 V RL = 12.5 Ω Rg = 4.7 Ω VDD = 10 V VGS = 4.5 V ID = 1.5 A IF = 1.5 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0310EJ0200 Rev.2.00 Mar 28, 2011 Page 2 of 7 RQK0606KGDQA Preliminary Main Characteristics Maximum Channel Power Dissipation Curve 100 Test Condition : When using the glass epoxy board (FR-4 40 x 40 x 1 mm) 0.8 30 Drain Current ID (A) Channel Dissipation Pch (W) 1 Maximum Safe Operation Area 0.6 0.4 0.2 10 0 3 1 PW 1 DC 0.3 μs s = 10 m s Op er 0.1 m at ion 0.03 Operation in this area 0.01 is limited by RDS(on) 0.003 Ta = 25°C 1shot pulse 0.001 0.01 0.03 0.1 0.3 0 0 25 50 75 100 125 150 175 10 30 100 Typical Output Characteristics Typical Transfer Characteristics (1) 5V 8 7V 3.0 V 10 V 2.2 V 6 2.4 V 2.0 V 1.8 V 4 1.6 V 1.4 V 2 Pulse Test Tc = 25°C 2 Drain Current ID (A) 2.8 V 2.6 V 0 3 Drain to Source Voltage VDS (V) 8 0 1 Ambient Temperature Ta (°C) 10 Drain Current ID (A) 10 μs 10 6 8 25°C Tc = 75°C 4 2 VDS = 10 V Pulse Test VGS = 0 V 4 –25°C 6 0 10 Drain to Source Voltage VDS (V) 0 2 4 6 8 Gate to Source Voltage VGS (V) 1 Drain Current ID (A) VDS = 10 V Pulse Test 0.1 0.01 Tc = 75°C 0.001 25°C 0.0001 –25°C 0.00001 0 0.5 1 1.5 Gate to Source Voltage VGS (V) R07DS0310EJ0200 Rev.2.00 Mar 28, 2011 2 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 10 ID = 10 mA 1 1 mA 0.1 mA VDS = 10 V Pulse Test 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 7 Preliminary 800 Pulse Test Tc = 25°C 600 400 2A 1.5 A 200 1A ID = 0.5 A 0 0 2 4 6 8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 1000 Pulse Test Tc = 25°C VGS = 2.5 V 4.5 A 10 A 100 0.1 1 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (1) Static Drain to Source on State Resistance vs. Case Temperature (2) Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) 500 Pulse Test VGS = 4.5 V 400 ID = 2 A 1.5 A 300 200 1A 0.5 A –25 0 25 50 75 100 125 150 500 Pulse Test VGS = 2.5 V ID = 2 A 400 1.5 A 300 1A 200 0.5 A 100 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature IDSS (nA) 100 10 –25°C Pulse Test VDS = 10 V 25°C 1 Tc = 75°C 0.1 0.01 0.1 1 Drain Current ID (A) R07DS0310EJ0200 Rev.2.00 Mar 28, 2011 10 Zero Gate Voltage Drain current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) RQK0606KGDQA 10000 1000 Pulse Test VGS = 0 V VDS = 60 V 100 10 1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 7 RQK0606KGDQA Preliminary Switching Characteristics VGS 10 V 60 VDD = 50 V 12 25 V VDD = 50 V 40 8 25 V 10V 4 20 0 ID = 1.5 A Tc = 25°C VDS 0 2 4 6 1000 Switching Time t (ns) 16 80 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(off) td(on) 10 tr 10 1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 450 Ciss Coss 10 Ciss2 (pF) 400 100 Crss 350 300 VGS = 0 V f = 1 MHz VDS = 0 V f = 1 MHz 1 0 10 20 30 40 50 2 4 6 8 10 Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 6 10 V 4.5 V VGS = –2.5 V, –4.5 V, –10 V 2.5 V 2 VGS = 0 V 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0310EJ0200 Rev.2.00 Mar 28, 2011 Body-Drain Diode Forward Voltage VSDF (V) Gate to Source Voltage VGS (V) 8 0 0 Drain to Source Voltage VDS (V) Pulse Test Tc = 25°C 4 250 –10 –8 –6 –4 –2 60 10 Reverse Drain Current IDR (A) 0.1 Gate Charge Qg (nc) 1000 Ciss1, Coss, Crss (pF) tf 100 1 0.01 0 10 8 VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω, duty ≤ 1 % Tc = 25°C 0.7 VGS = 0 0.6 0.5 ID = 10 mA 0.4 0.3 1 mA 0.2 0.1 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 5 of 7 RQK0606KGDQA Preliminary Switching Time Test Circuit 90% Vout Monitor Vin Monitor Rg Switching Time Waveform D.U.T. RL Vin Vout Vin 10 V VDD = 10 V 10% 10% 90% td(on) R07DS0310EJ0200 Rev.2.00 Mar 28, 2011 10% tr 90% td(off) tf Page 6 of 7 RQK0606KGDQA Preliminary Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g A Q e E HE L A c LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Orderable Part Number RQK0606KGDQATL-H R07DS0310EJ0200 Rev.2.00 Mar 28, 2011 Quantity 3000 pcs. Shipping Container φ178 mm reel, 8 mm Emboss taping Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. 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