Thin Film ESD Guard（Air Gap Type） ESD0201V05 Description This specification is applied to electrostatic discharge(ESD) protection. It is designed to protect the high-speed data lines against ESD transients. It has very low capacitance and fast turn on times makes it ideal for data and transmission lines with high data rates. It can apply to HDMI, USB3.0, Display port, Thunderbolt, etc. Feature Functional Diagram Protection against ESD voltages and currents (IEC61000-4-2 Level 4) Extremely quick response time (<1ns) present ideal ESD protection Extremely low capacitance (0.05pF typical) Bi-directional device Zero signal distortion Applications Communication systems Microprocessor based equipment Personal Digital Assistants (PDA’s) ◆ Notebooks, Desktops, and Servers ◆ Digital Camera; ◆ Notebooks (DVI/HDMI)、Desktops and Servers; Cell Phone Handsets and Accessories Construction & Dimensions W Substrate : Ceramic (Alumina) End termination : Ag/Ni/Sn Construction & Dimension : L H B Unit: mm UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 1/4 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Thin Film ESD Guard（Air Gap Type） ESD0201V05 Mechanical Characteristics Symbol TJ TSTG TL Parameter Value Units Operating Junction Temperature Range -55 to +125 ºC Storage Temperature Range -55 to +125 ºC 260 ºC Soldering Temperature, T max = 10s Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Characteristics Symbol Test Conditions Min. Typ. Max. Unit Rated voltage VDC -- -- -- 5 V Trigger voltage VT -- 300 -- V -- -- 1 ns measurement by using Transmission Line Pulse(TLP) Response time Clamping voltage VC measurement by using Transmission Line Pulse (TLP) -- -- 20 V Capacitance, @1MHz Cp Device capacitance measured with 1Vrms -- -- 0.05 pF ESD voltage capability Contact discharge mode -- -- 8 -- 15 -- Air discharge mode kV SURFACE MOUNT TAPE AND REEL PACKAGING Carrier tape dimensions E F C B A L 0201 A D W T UN Semiconductor Co., Ltd. Revision December 18, 2013 8.00±0.30 B 3.50±0.05 C 1.75±0.10 D 2.00±0.05 E 4.00±0.10 F 1.50±0.10 L 0.69±0.03 W 0.39±0.03 T 0.42±0.03 www.unsemi.com.tw 2/4 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Thin Film ESD Guard（Air Gap Type） ESD0201V05 SURFACE MOUNT TAPE AND REEL PACKAGING Packaging method： Products shall be heat-sealed in the chip pocket, spacing pitch 2-mm of paper carrier tape with cover tape, and the carrier tape shall be reeled to the reel. Tape material to be paper. Tape thickness to be 0.42 ± 0.03 mm. Cover tape adhesion to be 40 ± 15 grams. Quantity of products in the taping package Standard quantity：15,000pcs/Reel Shipping quantity is a multiple of standard quantity. Carrier tape dimensions Recommended Soldering Parameters UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 3/4 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Thin Film ESD Guard（Air Gap Type） ESD0201V05 Recommended Soldering Parameters Reference IPC-020c-5-1 Profile Feature Average Ramp Rate Pb free Assembly 3 ℃/second max (Ts max to Tp) Preheat - Temperature Min (Tsmin) - Temperature Min (Tsmax) 150℃ - 60-180 seconds Time(tsmin to tsmin) 200℃ Time maintained above: - Temperature (TL) 217℃ - 60-150 seconds Time (tL) Peak Temperature (Tp) 260℃ +0/-5 ℃ Time within 5 ℃ of actual Peak 20-40 seconds Temperature (Tp) 6 ℃/second max. Ramp-Down Rate Time 25℃ to Peak Temperature 8 minutes max Soldering gun procedure Note the follows, in case of using solder gun for replacement. (1) The tip temperature must be less than 280°C for the period within 3 seconds by using soldering gun under 30 W. (2) The soldering gun tip shall not touch this product directly. Soldering volume Note that excess of soldering volume will easily get crack the body of this product. Taping Package Storage Condition Storage Temperature: 5 to 40 ℃ Relative Humidity: < 65%RH Storage Time: 12 months max UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 4/4 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.