ESD05V36T-4L

Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD05V36T-4L
Description
SOT-363
The ESD05V36T-4L is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time,
make these parts ideal for ESD protection on designs where
board space is at a premium.
Feature
Functional Diagram
u
150 Watts Peak Pulse Power per Line (tp=8/20μs)
u
Protects four I/O lines
u
Low clamping voltage
u
Working voltages : 5V
u
Low leakage current
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IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
u
IEC61000-4-4 (EFT) 40A (5/50ηs)
u
IEC61000-4-5 (Lightning) 12A (8/20μs)
Applications
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USB OTG
u
Video Graphics Cards
u
Monitors and Flat Panel Displays
u
High-Definition Multimedia Interface (HDMI)
Mechanical Characteristics
u
10/100/1000 Ethernet
u
IEEE 1394 Fire wire Ports
u
SIM Ports
u
ATM Interfaces
u
JEDEC SOT-363 Package
u
Molding Compound Flammability Rating : UL 94V-0
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Weight 8.0 Milligrams (Approximate)
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Quantity Per Reel : 3,000pcs
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Reel Size : 7 inch
u
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
Parameter
Value
Units
150
W
PPP
Peak Pulse Power (tp=8/20μs waveform)
TL
Lead Soldering Temperature
260 (10sec)
ºC
TSTG
Storage Temperature Range
-55 to +150
ºC
Operating Temperature Range
-55 to +150
ºC
TJ
Air Discharge
±15
Contact Discharge
±8
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
40
A
IEC61000-4-5 ( Lightning )
12
A
UN Semiconductor Co., Ltd.
Revision January 06, 2014
KV
www.unsemi.com.tw
1/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD05V36T-4L
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
Device
Marking
VRWM
(V)
(Max.)
VB
(V)
(Min.)
IT
(mA)
VC
@1A
(Max.)
(Max.)
B54
5.0
6.0
1
15.0
25.0
ESD05V36T-4L
(@A)
IR
(μA)
(Max.)
C
(pF)
(Typ.)
6
1
2
VC
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
120
IPP - Peak Pulse Current - % of IPP
100
100%
TEST
WAVEFORM
PARAMETERS
tr=8μs
td=20μs
Peak Value IPP
80
Percent of Peak Pulse Current %
tr
60
40
td=t IPP/2
20
0
0
5
10
15
20
25
10%
tr = 0.7~1ns
Time (ns)
30ns
30
60ns
t - Time (μs)
Fig3.
90%
Power Derating Curve
% of Rated Power
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Ambient Temperature – TA (ºC)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
www.unsemi.com.tw
2/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD05V36T-4L
Characteristic Curves
Fig4.
Fig5.
Normalized Capacitance Vs. Reverse Voltage
Clamping Voltage Vs. Peak Pulse Current
2.0
Clamping Voltage (V)
Junction Capacitance (pF)
25
1.5
1.0
0.5
0
0
1
2
3
4
VBR, Reverse Voltage (V)
20
10
5
3
0
5
0
2
4
6
8
Peak Pulse Current (A)
10
SOT-363 Package Outline & Dimensions
Inches
Symbol
Min.
A
0.031 0.037 0.043 0.80 0.95 1.10
A1
0.000 0.002 0.004 0.00 0.05 0.10
A3
UN Semiconductor Co., Ltd.
Revision January 06, 2014
0.08 REF
0.2 REF
b
0.004 0.008 0.012 0.10 0.21 0.30
C
0.004 0.005 0.010 0.10 0.14 0.25
D
0.070 0.078 0.086 1.80 2.00 2.20
E
0.045 0.049 0.053 1.15 1.25 1.35
e
Soldering Footprint
Millimeters
Nom. Max. Min. Nom. Max.
0.026 BSC
0.65 BSC
L
0.004 0.008 0.012 0.10 0.20 0.30
HE
0.078 0.082 0.086 2.00 2.10 2.20
Symbol
Inches
Millimeters
C
0.0748
1.9
G
0.055
1.40
P
0.025
0.65
X
0.0157
0.40
Y
0.019
0.50
Z
0.0945
2.4
www.unsemi.com.tw
3/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.