Transient Voltage Suppressors for ESD Protection ESD3.3V88D-2C Description The ESD3.3V88D-2C is ultra low capacitance TVS arrays DFN1006P3 designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). Feature Functional Diagram 40 Watts Peak Pulse Power per Line (tp=8/20µs) Protects two birectional I/O lines Low clamping voltage Working voltages : 3.3V Low leakage current Provides ESD protection to IEC61000-4-2(ESD): ±30kV (air discharge) ±30kV (contact discharge); Applications Cell Phone Handsets and Accessories Mechanical Data Microprocessor based equipment DFN1006P3 (1.0x0.6x0.5mm) Package Personal Digital Assistants (PDA’s) Molding Compound Flammability Rating : UL 94V-O ◆ Notebooks, Desktops, and Servers Weight 0.5 Millgrams (Approximate) ◆ Portable Instrumentation Quantity Per Reel : 10,000pcs ◆ Peripherals Reel Size : 7 inch ◆ Pagers Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units Ppp Peak Pulse Power (tp=8/20µs waveform) 40 Watts TJ Operating Junction Temperature Range -55 to +150 ºC Storage Temperature Range -55 to +150 ºC 260 ºC TSTG TL Soldering Temperature, T max = 10s UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESD3.3V88D-2C Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Characteristics Reverse Working Voltage Reverse Breakdown Voltage Symbol Test Conditions Min. Typ. Max. Unit VRWM -- -- -- 3.3 V 3.5 -- -- V VRWM =5V；T=25°C -- -- 0.01 μA IPP =4A，TP =8/20μS； -- -- 10.5 V VR =0V，f=1MHz； -- -- 7 VBR Reverse Leakage IR Current Positive Clamping Voltage VC1 Capacitance Between I/O And It=1mA CJ2 GND pF VR =3.3V，f=1MHz； -- -- 4.5 Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2.ESD Pulse Waveform (according to IEC 61000-4-2) Percent of Peak Pulse Current % 100% 90% 10% tr 0.7~1ns 30ns = Time (ns) 60ns Fig3. Power Derating Curve Fig4. V-I characteristics for a bidirectional ESD protection diode UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESD3.3V88D-2C Characteristic Curves Fig5. ESD Clamping Volatge Screenshot Fig6. Positive 8 KV contact per IEC 61000-4-2 ESD Clamping Volatge Screenshot Negative 8 KV contact per IEC 61000-4-2 DNF1006P3 Package Outline & Dimensions UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.