Transient Voltage Suppressors Array for ESD Protection Low

Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD05V32T-2LC
Description
SOT-323
The ESD05V32T-2LC is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time,
make these parts ideal for ESD protection on designs where
board space is at a premium.
Feature
Functional Diagram
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100 Watts Peak Pulse Power per Line (tp=8/20μs)
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Protects Two Lines in Common Mode or One Line in
Differential Mode
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Low Clamping Voltage
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Working Voltages : 5.0V
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Low Leakage Current
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IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
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IEC61000-4-4 (EFT) 40A (5/50ηs)
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IEC61000-4-5 (Lightning) 2A (8/20μs) )
Applications
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Cellular Handsets and Accessories
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High Speed I/O Lines
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USB Ports
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Serial ATA
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PCI Express
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Servers, Notebook, and Desktop PC
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Display Ports
Mechanical Characteristics
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SOT-323 Package
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Molding Compound Flammability Rating : UL 94V-0
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Weight 6.0 Milligrams (Approximate)
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Quantity Per Reel : 3,000pcs
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Reel Size : 7 inch
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Lead Finish : Lead Free
Mechanical Characteristics
Symbol
Parameter
Value
Units
100
W
PPP
Peak Pulse Power (tp=8/20μs waveform)
TL
Lead Soldering Temperature
260 (10sec)
ºC
TSTG
Storage Temperature Range
-55 to +150
ºC
Operating Temperature Range
-55 to +150
ºC
TJ
Air Discharge
±25
Contact Discharge
±15
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
40
A
IEC61000-4-5 ( Lightning )
2
A
UN Semiconductor Co., Ltd.
Revision January 06, 2014
KV
www.unsemi.com.tw
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@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD05V32T-2LC
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
Device
Marking
VRWM
(V)
(Max.)
VB
(V)
(Min.)
IT
(mA)
VC
@1A
(Max.)
(Max.)
B BU
5
6
1
9.8
15
ESD05V32T-2LC
(@A)
IR
(μA)
(Max.)
C
(pF)
(Typ.)
2
1
1.2
VC
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
tr
100
Peak Value IPP
80
100%
TEST
WAVEFORM
PARAMETERS
tr=8μs
td=20μs
Percent of Peak Pulse Current %
IPP - Peak Pulse Current - % of IPP
120
60
40
td=t IPP/2
20
0
0
5
10
15
20
25
10%
tr = 0.7~1ns
Time (ns)
30ns
30
60ns
t - Time (μs)
Fig3.
90%
Power Derating Curve
100
90
% of Rated Power
80
70
60
50
40
30
20
10
0
0
20
40 60 80 100 120 140 160 180 200
Ambient Temperature – TA (ºC)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
www.unsemi.com.tw
2/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD05V32T-2LC
Characteristic Curves
Fig4.
ESD Clamping (+8KV Contac per IEC61000-4-2)
Fig5.
ESD Clamping (-8KV Contac per IEC61000-4-2)
SOT-323 Package Outline & Dimensions
Symbol
Millimeters
Min.
Min.
Nom.
Max.
0.80
090
1.00
0.032
0.035
0.040
0.00
0.05
0.10
0.000
0.002
0.004
0.70REF
0.028REF
0.30
0.35
0.40
0.012
0.014
0.016
c
0.10
0.18
0.25
0.004
0.007
0.010
D
1.80
2.10
2.20
0.071
0.083
0.087
E
1.15
1.24
1.35
0.045
0.049
0.053
e
1.20
1.30
1.40
0.047
0.051
0.055
e1
Revision January 06, 2014
Max.
A
b
UN Semiconductor Co., Ltd.
Nom.
A1
A2
Soldering Footprint
Inches
0.65 BSC
0.026 BSC
L
0.20
0.38
0.56
0.008
0.015
0.022
HE
2.00
2.10
2.40
0.079
0.083
0.095
Symbol
Millimeters
Inches
X
0.70
0.028
X1
0.65
0.025
Y
0.90
0.035
Z
1.90
0.075
www.unsemi.com.tw
3/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.