SMS4003K 0.5 A, 30V N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Low gate voltage threshold VGS(TH) to facilitate drive circuit design Low gate charge for fast switching ESD protected gate Minimum breakdown voltage rating of 30V A L 3 3 C B Top View 1 1 K 2 D APPLICATION 2 E F Level shifters Level switches Low side load switches Portable applications H G REF. A B C D E F DEVICE MARKING: TR8 Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 3 DRAIN 1 GATE * * Gate Pretection Diode SOURCE 2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDS 30 V Gate – Source Voltage VGS ±20 V Continuous Drain Current1, Steady TA=25°C State TA=85°C ID Power Dissipation1, Steady State PD Continuous Drain Current1 , t<10s TA=25°C TA=85°C 1 Power Dissipation , t<5s ID PD Pulsed Drain Current IDM Steady State1 Maximum Junction – Ambient t<10s1 0.69 0.56 0.40 A W A 0.83 W 1.7 A 180 RθJA Steady State2 Operating Junction & Storage Temperature Range 0.5 0.37 150 °C/W 300 TJ, TSTG 150, -55~150 °C Source Current (Body Diode) IS 1.0 A Lead Temperature for Soldering Purposes(1/8” from case 10s TL 260 °C Note: 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area=1.127 in sq【1 oz】including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size. 10-Jan-2010 Rev. A Page 1 of 4 SMS4003K 0.5 A, 30V N-Channel MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION STATIC CARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 30 - - V VGS=0V, ID =100µA Gate-Source Threshold Voltage3 VGS(TH) 0.8 - 1.6 V VDS= VGS, ID =250µA Gate-Source Leakage Current IGSS - - ±1.0 Zero Gate Voltage Drain Current IDSS - - 1.0 µA VDS=30V, VGS=0V, TJ=25°C Ω VGS=2.5V, ID=10mA S VDS=3V, ID=10mA pF VDS=5V VGS=0V f=1MHz nS VGS=4.5V VDD=5V I D=0.1A RG=50Ω nC VGS=5V VDS=24V I D=0.1A V VGS=0V IS =10mA nS VGS=0V, IS =10mA, dls/dt=8A /µs Drain-Source On-Resistance3 3 Forward Transconductance RDS(ON) gFS - 1.5 2.0 - 1.0 1.5 - 0.33 - µA VGS=±10V VGS=4.0V, ID=10mA DYNAMIC CHARACTERISTICS Input Capacitance CISS - 21 - Output Capacitance COSS - 19.7 - Reverse Transfer Capacitance CRSS - 8.1 - Turn-on Delay Time4 Td(ON) - 16.7 - TR - 47.9 - Td(OFF) - 65.1 - SWITCHING CHARACTERISTICS Rise Time4 Turn-off Delay Time4 Fall Time4 TF - 64.2 - Total Gate Charge QG - 1.15 - QG(TH) - 0.15 - Threshold Gate Charge Gate-Source Charge QGS - 0.32 - Gate-Drain Charge QGD - 0.23 - SOURCE-DRAIN DIODE CARACTERISTICS Forward On Voltage Reverse Recovery Time TJ=25°C TJ=125°C VSD Trr - 0.65 0.7 - 0.45 - - 14 - Note: 3. Pulse Test: Pulse width ≦300µs, duty cycle ≦2%. 4. Switching characteristics are independent of operating junction temperatures. 10-Jan-2010 Rev. A Page 2 of 4 SMS4003K Elektronische Bauelemente 0.5 A, 30V N-Channel MOSFET CHARACTERISTIC CURVES 10-Jan-2010 Rev. A Page 3 of 4 SMS4003K Elektronische Bauelemente 0.5 A, 30V N-Channel MOSFET CHARACTERISTIC CURVES 10-Jan-2010 Rev. A Page 4 of 4