SSG4835P -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. SOP-8 B L D M A C N J FEATURES H Low RDS(on) provides higher efficiency and extends battery life. Miniature SOP-8 surface mount package saves board space. High power and current handling capability. Extended VGS range (±20) for battery pack applications. G REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13’ inch S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V -9.5 A -8.3 A IDM -50 A IS -4 A 3.1 W 2.2 W -55 ~ 150 °C 40 °C / W 80 °C / W Continuous Drain Current 1 Pulsed Drain Current TA = 25°C TA = 70°C 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range ID PD TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Jul-2014 Rev. C Any changes of specification will not be informed individually. Page 1 of 4 SSG4835P -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 μA VDS= -24V, VGS= 0V - - -25 μA VDS= -24V, VGS= 0V, TJ=55°C -20 - - A VDS= -5V, VGS= -10V - - 19 - - 30 gfs - 20 - S VDS= -15V, ID= -7.6A VSD - -0.74 - V IS= -2A, VGS= 0V Gate Threshold Voltage On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) mΩ VGS= -10V, ID= -7.6A VGS= -4.5V, ID= -6A Dynamic 2 Total Gate Charge Qg - 31 - Gate-Source Charge Qgs - 6.8 - Gate-Drain Charge Qgd - 13 - Turn-On Delay Time Td(on) - 8 - Tr - 16 - Td(off) - 98 - Tf - 53 - Input Capacitance Ciss - 1934 - Output Capacitance Coss - 408 - Reverse Transfer Capacitance Crss - 226 - Rise Time Turn-Off Delay Time Fall Time nC ID= -7.6A VDS= -15V VGS= -4.5V nS VDS= -15V, ID= -7.6A VGEN= -10V, RL= 1.9Ω RG= 6Ω pF VDS= -15V VGS=0 f=1MHz Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Jul-2014 Rev. C Any changes of specification will not be informed individually. Page 2 of 4 SSG4835P Elektronische Bauelemente -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 14-Jul-2014 Rev. C Any changes of specification will not be informed individually. Page 3 of 4 SSG4835P Elektronische Bauelemente -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 14-Jul-2014 Rev. C Any changes of specification will not be informed individually. Page 4 of 4