SMG2336N

SMG2336N
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
A
L
3
3
FEATURES




C B
Top View
1
1
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
2
K
E
2
D
G
H
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
F
REF.
A
B
C
D
E
F
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
TA=25°C
Continuous Drain Current 1
TA=70°C
Pulsed Drain Current 2
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation 1
ID
1
IS
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
PD
TJ, TSTG
5.3
4.1
A
30
A
1.9
A
1.3
0.8
-55 ~ 150
W
°C
Thermal Resistance Rating
Maximum Junction to Ambient 1
t≦10 sec
Steady-State
RθJA
100
166
°C/W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
09-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2336N
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Static
Gate-Threshold Voltage
VGS(th)
0.4
-
-
V
VDS =VGS, ID=250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS =0, VGS=±12V
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
25
5
-
-
-
-
32
-
-
64
gFS
-
8
-
S
VDS=15V,,ID =4.1A
VSD
-
0.68
-
V
IS=9A, VGS=0
On-State Drain Current
1
ID(ON)
Drain-Source On-Resistance 1
Forward Transconductance
1
Diode Forward Voltage
RDS(ON)
Dynamic
Qg
-
8
-
Gate-Source Charge
Qgs
-
1.1
-
Gate-Drain Charge
Qgd
-
3.4
-
Input Capacitance
Ciss
-
449
-
Output Capacitance
Coss
-
70
-
Reverse Transfer Capacitance
Crss
-
56
-
Td(ON)
-
7
-
Tr
-
15
-
Td(OFF)
-
37
-
Tf
-
11
-
Rise Time
Turn-Off Delay Time
Fall Time
A
mΩ
VDS =24V, VGS=0
VDS =24V, VGS=0, TJ=55°C
VDS =5V, VGS=4.5V
VGS=4.5V, ID =4.1A
VGS=2.5V, ID =3.3A
2
Total Gate Charge
Turn-On Delay Time
μA
nC
ID=4.1A
VDS=15V
VGS=4.5V
pF
VDS=15V,
VGS=0,
f=1MHz
nS
ID= 4.1A,
VDS=15V
VGEN=4.5V
RL=3.7Ω
RGEN=6Ω
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
09-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2336N
Elektronische Bauelemente
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
09-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2336N
Elektronische Bauelemente
5.3 A, 30 V, RDS(ON) 32 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
09-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4