SSG12N03 12A, 30V, RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG12N03 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. B L FEATURES D M Low on-resistance Simple Drive Requirement Double-N MosFET Package A C N J H G K E F MARKING CODE REF. 12N03SC A B C D E F G = Date Code PACKAGE INFORMATION Package MPQ Leader Size SOP-8 3K 13’ inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA = 25°C Continuous Drain Current 1 TA = 70°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 Avalanche Current Power Dissipation 4 Maximum Junction to Ambient 1 Maximum Junction to Case 1 Operating Junction & Storage Temperature Range http://www.SeCoSGmbH.com/ 23-Jan-2014 Rev. B ID 12 8.2 A IDM 52 A EAS 130 mJ IAS 34 A PD 1.5 W RθJA 85 °C / W RθJC 50 °C / W TJ, TSTG -55~150 °C Any changes of specification will not be informed individually. Page 1 of 4 SSG12N03 12A, 30V, RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0V, ID=250μA Gate-Threshold Voltage VGS(th) 1 - 2.5 V VDS=VGS, ID =250μA Forward Transfer Conductance Gfs - 35 - S VDS=5V, ID=10A Gate-Body Leakage IGSS - - ±100 nA VGS=±20V Gate Resistance RG - 2.1 3.5 Ω f=1.0MHz - - 1 μA VDS=24V,VGS=0 - - 5 μA VDS=24V,VGS=0 - - 9 - - 13.5 Zero Gate Voltage Drain Current TJ=25°C TJ=55°C Drain-Source On-Resistance 2 IDSS RDS(ON) Total Gate Charge Qg - 10.6 - Gate-Source Charge Qgs - 4 - Gate-Drain (“Miller”) Charge Qgd - 4.1 - Td(on) - 5.8 - Tr - 61 - Td(off) - 23.6 - Tf - 7.6 - Input Capacitance Ciss - 1127 - Output Capacitance Coss - 194 - Reverse Transfer Capacitance Crss - 77 - Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time mΩ VGS=10V, ID =10A VGS=4.5V, ID =8A nC ID=10A VDS=15V VGS= 4.5V nS VDD=15V ID=10A VGS=10V RG=1.5Ω pF VGS=0V VDS=15V f=1.0MHz mJ VDD=25V, L=0.1mH, IAS=20A Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 45 - - Source-Drain Diode 1.6 Continuous Source Current IS - - 12 Pulsed Source Current ISM - - 52 Forward On Voltage 2 VDS - - Reverse Recovery Time Trr - Reverse Recovery Charge Qrr - 2.6 A VG=VD=0, Force Current. 1 V IS=1A, VGS=0, TJ =25°C 14.1 - nS 5.9 - nC IF=10A, dl/dt=100A/μs, TJ =25°C Notes: 1 surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 125℃/W when mounted on Min. copper pad. 2 The data tested by pulsed , pulse width≦300us , duty cycle≦2% 3 The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A 4 The power dissipation is limited by 150℃ junction temperature 5 The Min. value is 100% EAS tested guarantee. 6 The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ 23-Jan-2014 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG12N03 Elektronische Bauelemente 12A, 30V, RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 23-Jan-2014 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG12N03 Elektronische Bauelemente 12A, 30V, RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 23-Jan-2014 Rev. B Any changes of specification will not be informed individually. Page 4 of 4