SMG3407

SMG3407
-4.1A , -30V , RDS(ON) 52 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
The SMG3407 uses advanced trench technology to
provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM
applications.
A
L
3
3
C B
Top View
1
1
FEATURES


2
K
Lower Gate Threshold Voltage
Small Package Outline
E
2
D
F
REF.
MARKING
A
B
C
D
E
F
3407
G
H
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
1
7 inch
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
Continuous Drain Current 3
TA=70°C
Pulsed Drain Current 1
Power Dissipation
TA=25°C
ID
-3.5
A
IDM
-20
A
PD
1.38
W
0.01
W / °C
-55~150
°C
90
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
-4.1
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
http://www.SeCoSGmbH.com/
11-Dec-2014 Rev. B
3
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SMG3407
-4.1A , -30V , RDS(ON) 52 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1.0
-
-3
V
VDS=VGS, ID= -250uA
Forward Transconductance
gfs
-
8.2
-
S
VDS= -5V, ID= -4A
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
Drain-Source Leakage Current
IDSS
-
-
-1
-
-
-5
Drain-Source On-Resistance 2
RDS(ON)
-
-
52
-
-
87
-
7
-
2
Total Gate Charge
Qg
μA
mΩ
VDS= -30V, VGS=0
VDS= -24V, VGS=0
VGS= -10V, ID= -4.1A, TJ=25°C
VGS= -4.5V, ID= -3.0A , TJ=55°C
nC
VDS= -4.5V,
VGS= -15V,
ID= -4A
nS
VDS= -15V,
VGS= -10V,
RG=3Ω,
RL=3.6Ω,
pF
VGS=0,VDS= -15V,f=1.0MHz
Gate-Source Charge
Qgs
-
3.1
-
Gate-Drain Charge
Qgd
-
3
-
Td(on)
-
8.6
-
Tr
-
5
-
Td(off)
-
28.2
-
Tf
-
13.5
-
Input Capacitance
Ciss
-
700
-
Output Capacitance
Coss
-
120
-
Reverse Transfer Capacitance
Crss
-
75
-
Gate Resistance
Rg
-
10
-
Ω
f=1.0MHz
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Source-Drain Diode
1
Diode Forward Voltage
VSD
-
-
-1
V
IS= -1A, VGS=0
Reverse Recovery Time
TRR
-
27
-
ns
Reverse Recovery Charge
QRR
-
15
-
nC
IS= -4A, VGS=0
dI/dt=100A/μs
IS
-
-
-2.2
A
1
Continuous Source Current (Body Diode)
VD= VG=0, VS= -1V
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300μs, duty cycle≦2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
11-Dec-2014 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SMG3407
Elektronische Bauelemente
-4.1A , -30V , RDS(ON) 52 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
11-Dec-2014 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SMG3407
Elektronische Bauelemente
-4.1A , -30V , RDS(ON) 52 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
11-Dec-2014 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4