SMS8810 7A , 20V , RDS(ON) 20 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The SMS8810 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A L 3 3 C B Top View 1 1 2 K E 2 D FEATURES F Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. A B C D E F MARKING H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 8810 Top View PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A IDM 30 A RθJA 417 °C / W TJ, TSTG 150, -55~150 °C TL 260 °C Continuous Drain Current Pulsed Drain Current 1 Thermal Resistance Junction-Ambient Operating Junction & Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Note: 1. Repetitive rating：Pulse width limited by junction temperature. http://www.SeCoSGmbH.com/ 13-Mar-2015 Rev.A Any changes of specification will not be informed individually. Page 1 of 3 SMS8810 7A , 20V , RDS(ON) 20 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250µA Drain-Source Leakage Current IDSS - - 1 µA VDS=16V, VGS=0 - - ±1 Gate-Source Leakage Current IGSS Gate-Threshold Voltage 1 Forward Transconductance Diode Forward Voltage 1 1 Static Drain-Source On-Resistance 1 - - ±10 VGS(th) 0.4 - 1 V VDS=VGS, ID=250µA gfs 9 - - S VDS=5V, ID=7A VSD - - 1 V IS=1A, VGS=0 - - 20 VGS=10V, ID=7A - - 22 VGS=4.5V, ID=6.6A - - 24 - - 26 VGS=2.5V, ID=5.5A - - 35 VGS=1.8V, ID=5A RDS(ON) Dynamic Parameters Ciss - 1150 - Output Capacitance Coss - 185 - Reverse Transfer Capacitance Crss - 145 - Total gate charge Qg - 15 - Gate-source charge Qgs - 0.8 - Gate-drain charge Qgd - 3.2 - Switching Parameters Rise Time Turn-off Delay Time Fall Time VGS= ±8V, VDS=0 mΩ VGS=3.8V, ID=6A 2 Input Capacitance Turn-on Delay Time VGS= ±4.5V, VDS=0 µA pF VGS =0 VDS=10V f =1.0MHz nC VGS =4.5V VDS=10V ID=7A nS VDD=10V VGEN=5V RGEN=3Ω RL=1.35Ω 2 Td(on) - 6 - Tr - 13 - Td(off) - 52 - Tf - 16 - Note: 1. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 0.5%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 13-Mar-2015 Rev.A Any changes of specification will not be informed individually. Page 2 of 3 SMS8810 Elektronische Bauelemente 7A , 20V , RDS(ON) 20 mΩ Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 13-Mar-2015 Rev.A Any changes of specification will not be informed individually. Page 3 of 3