2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92S High Current Capability High DC Current Gain Small Package REF. A B C D E F G H J K L APPLICATIONS Audio Amplifier Applications AM Amplifier Applications Millimeter Min. Max. 3.90 4.10 3.05 3.25 1.42 1.62 15.1 15.5 2.97 3.27 0.66 0.86 2.44 2.64 1.27 REF. 0.36 0.48 0.36 0.51 45° CLASSIFICATION OF hFE Collector Product-Rank 2SC3199-O 2SC3199-Y 2SC3199-GR Range 70~140 120~240 200~400 Base Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 150 mA Collector Power Dissipation PC 400 mW RθJA 312 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction To Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=50V, IE=0 Emitter Cut – Off Current IEBO - - 0.1 μA VEB=5V, IC=0 DC Current Gain hFE 70 - 400 VCE(sat) - - 0.25 V IC=100mA, IB=10mA Cob - - 3.5 pF VCB=10V, IE=0, f=1MHz fT 80 - - MHz Collector to Emitter Saturation Voltage Collector Output Capacitance Transition Frequency http://www.SeCoSGmbH.com/ 22-Aug-2013 Rev. E Test Condition VCE=6V, IC=2mA VCE=10V, IC=1mA Any changes of specification will not be informed individually. Page 1 of 3 2SC3199 Elektronische Bauelemente 0.15 A , 50 V NPN Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-Aug-2013 Rev. E Any changes of specification will not be informed individually. Page 2 of 3 2SC3199 Elektronische Bauelemente 0.15 A , 50 V NPN Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-Aug-2013 Rev. E Any changes of specification will not be informed individually. Page 3 of 3