SSM0410S 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-223 The SSM0410S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A M 4 Top View CB 1 2 K E FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic D F G REF. MARKING 0410S 3 L A B C D E F = Date code Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 H REF. G H J K L M J Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 D PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 3 A 1.7 A IDM 5.5 A PD 1.5 W TJ, TSTG -65~150 °C RθJA 85 °C / W RθJC 36 °C / W Continuous Drain Current 1@VGS=10V Pulsed Drain Current Power Dissipation TA=25°C TA=70°C 2 3 TA=25°C Operating Junction & Storage Temperature ID Thermal Resistance Rating 1 Thermal Resistance Junction-Ambient (Max). 1 Thermal Resistance Junction-Case (Max). http://www.SeCoSGmbH.com/ 27-Jun-2013 Rev.B Any changes of specification will not be informed individually. Page 1 of 4 SSM0410S 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID= 250μA Gate-Threshold Voltage VGS(th) 1 - 2.5 V VDS=VGS, ID=250μA gfs - 4 - S VDS=5V, ID=2A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 - - 5 - - 310 - - 320 Forward Transconductance Static Drain-Source On-Resistance 2 RDS(ON) Total Gate Charge(10V) Qg - 9.1 - Gate-Source Charge Qgs - 2 - Gate-Drain Change Qgd - 1.4 - Td(on) - 2 - Tr - 21.6 - Td(off) - 11.2 - Tf - 18.8 - Input Capacitance Ciss - 508 - Output Capacitance Coss - 29 - Reverse Transfer Capacitance Crss - 16.4 - Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time μA VDS=80V, VGS=0, TJ=25°C VDS=80V, VGS=0, TJ=55°C mΩ VGS=10V, ID=3A VGS=4.5V, ID=1.7A nC ID=2A VDS=50V VGS=10V nS VDD=50V ID=2A VGS=10V RG=3.3Ω RL=30Ω pF VGS =0 VDS=15V f =1.0MHz IS=1A, VGS=0, TJ=25°C Source-Drain Diode Diode Forward Voltage 2 VSD - - 1.2 V Continuous Source Current 1,4 IS - - 3 A Pulsed Source Current 2,4 ISM - - 5.5 A Reverse Recovery Time Trr - 17.5 - nS Reverse Recovery Charge Qrr - 14 - nC Note: 1. 2. 3. 4. VD=VG=0, Force Current IF=2A, dl/dt=100A/μS, TJ=25°C The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% The power dissipation is limited by 150°C, junction temperature. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ 27-Jun-2013 Rev.B Any changes of specification will not be informed individually. Page 2 of 4 SSM0410S Elektronische Bauelemente 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Jun-2013 Rev.B Any changes of specification will not be informed individually. Page 3 of 4 SSM0410S Elektronische Bauelemente 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Jun-2013 Rev.B Any changes of specification will not be informed individually. Page 4 of 4