KS05V4 Low Capacitance Integrated ESD Protection Array Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TheKS05V4 is designed to protect I/Os being sensitive concerning capacitive load, such as USB2.0,Ethernet, DVI etc. from destruction byElectroStatic Discharges (ESD). Therefore, theKS05V4 incorporates four pairs of ultra-low capacity rail-to-rail diodes plus an additional Zener diode to provide protection to downstream signal and supply components from Electrostatic Discharge (ESD) voltages as high as Due to the rail-to-rail diodes being connected to the Zener diode, the protection is working independent from the availability of a supply voltage. The KS05V4 is fabricated using thin film-on-silicon technology and integrates 4 ultra-low capacity rail-to-rail ESD protection diodes in a miniature TSOP-6 package TSOP-6 A E B F C A B C D E F Digital Cameras Portable Instrumentation Notebooks, Desktops, and Serves Personal Digital Assistants (PDAs) Cell phone handsets and accessories H J K DG REF. APPLICATIONS L Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. Top View FEATURES low clamping voltage Low leakage current Small package TSOP-6 package ESD IEC 6100-4-2 Level 4, ±8 kV Contact Discharge Compliant Protection Low Voltage Clamping Due To Integrated Zener Diode Four Ultra-Low Input Capacitance (1 pF typ.) ESD Rail-to-Rail Protection Diodes MARKING KS05V4 = Date Code PACKAGE INFORMATION Package MPQ Leader Size TSOP-6 3K 7 inch http://www.SeCoSGmbH.com/ 25-Oct-2013 Rev. D Any changes of specification will not be informed individually. Page 1 of 3 KS05V4 Low Capacitance Integrated ESD Protection Array Elektronische Bauelemente ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Rating IEC 61000-4-2 (ESD) Symbol Value ±14 Air VESD kV ±8 Contact Peak pulse current (tp=8/20us) Unit VDD-GND IPP 6 A Peak pulse power (tp=8/20us) PPK 100 W Operating Temperature Range TJ -40~85 °C TSTG -55 ~ 125 °C TL 260 °C Storage temperature range Lead temperature . ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter DC Input Voltage Range Zener Diode Breakdown Voltage, Pin 5 to 2 Forward Voltage Diode Reverse Leakage Current, Pins 1,3,4,6 to Ground Pin Capacitance to Ground, Pins 1,3,4,6 Zener Diode Capacitance to Ground, Pin 5 to 2 Clamping Voltage http://www.SeCoSGmbH.com/ 25-Oct-2013 Rev. D Symbol Min. Typ. Max. Units - - 5.5 V 6 - 9 V - 0.7 - V - - 100 nA - 1 - pF - 40 - pF IPP=1A, tp=8/20us - - 6.8 V IPP=4A, tp=8/20us - - 8.1 V IPP=9A, tp=8/20us - - 11.5 V Condition VI/O VBRI/O I=1mA VF IIkg CI/O CZENER VC VRWM=3V Vdc=0V, f=1MHz Pin 5=3V Vdc=0V, f=1MHz Pin 5=3V Any changes of specification will not be informed individually. Page 2 of 3 KS05V4 Elektronische Bauelemente Low Capacitance Integrated ESD Protection Array Applications Information Universal Serial Bus 2.0 Protection The KS05V4 is optimized to protect e.g. two USB 2.0 ports of Electro-Static-Discharge (ESD). Each device is capable of protection both USB data lines and the VBUS supply. A typical application is shown in the schematic below. http://www.SeCoSGmbH.com/ 25-Oct-2013 Rev. D Any changes of specification will not be informed individually. Page 3 of 3