SCG2019 -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-523 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A M 3 3 MECHANICAL DATA D F G Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.35 REF. A B C D E F MARKING P9 2 E DC-DC converter circuit Load Switch 2 L K APPLICATION 1 1 Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage C B Top View H REF. G H J K L M J Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 Top View = Date Code PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating 10S Steady State Unit Drain – Source Voltage VDS -20 V Gate – Source Voltage VGS ±5 V Continuous Drain Current 1 Power Dissipation 1 Continuous Drain Current 2 Power Dissipation 2 TA= 25°C TA= 70°C TA= 25°C TA= 70°C TA= 25°C TA= 70°C TA= 25°C TA= 70°C Pulsed Drain Current 3 Lead Temperature Operating Junction & Storage Temperature Range http://www.SeCoSGmbH.com/ 15-Jul-2014 Rev. B ID PD ID PD IDM -0.73 -0.62 -0.58 -0.5 0.38 0.28 0.24 0.18 -0.61 -0.55 -0.49 -0.44 0.27 0.22 0.17 0.14 A W A W -1.2 A TL 260 °C TJ, TSTG 150, -55~150 °C Any changes of specification will not be informed individually. Page 1 of 4 SCG2019 -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Thermal Resistance 1 Junction-to-Ambient Thermal Resistance 2 Junction-to-Case Thermal Resistance Rating Symbol T≦10S Steady State T≦10S Steady State Steady State RθJA RθJA RθJC Typ. Max. 285 355 395 465 280 325 440 460 560 320 Unit °C / W Note: 1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper. 2. Surface mounted on FR4 board using minimum pad size, 1oz copper 3. Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% 4. Repetitive rating, pulse width limited by junction temperature TJ=150°C. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS -20 - - V VGS=0, ID= -250μA Zero Gate Voltage Drain Current IDSS - - -1 μA VDS= -16V, VGS=0 Gate-Source Leakage IGSS - - ±5 μA VDS=0 , VGS= ±5V VGS(TH) -0.4 -0.65 -0.9 V VDS=VGS, ID= -250μA - 480 810 - 620 1050 - 780 1300 - 1.25 - S VDS= -5V, ID= -0.45A -1.5 V IS= -150mA, VGS=0 pF VDS= -10V, VGS=0, f=100KHz nC VDS= -10V, VGS= -4.5V, ID= -0.45A nS VDD= -10V, I D= -0.45A, VGS= -4.5V, RG=6Ω. Gate-Threshold Voltage Drain-Source On Resistance Forward Transconductance RDS(ON) gFS VGS= -4.5V, ID= -0.45A mΩ VGS= -2.5V, ID= -0.35A VGS= -1.8V, ID= -0.25A Body-Drain Diode Ratings Diode Forward On–Voltage VSD -0.5 -0.65 Dynamic Characteristics Input Capacitance CISS - 74.5 - Output Capacitance COSS - 10.8 - Reverse Transfer Capacitance CRSS - 10.2 - Total Gate Charge QG(TOT) - 1.8 - Threshold Gate Charge QG(TH) - 0.12 - Gate-to-Source Charge QGS - 0.18 - Gate-to-Drain Charge QGD - 0.74 - Td(ON) - 45 - Tr - 140 - Td(OFF) - 1500 - Tf - 2100 - Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time http://www.SeCoSGmbH.com/ 15-Jul-2014 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SCG2019 Elektronische Bauelemente -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Jul-2014 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SCG2019 Elektronische Bauelemente -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Jul-2014 Rev. B Any changes of specification will not be informed individually. Page 4 of 4