RENESAS RJM0404JSC

Preliminary Datasheet
RJM0404JSC
Silicon N/P Channel Power MOS FET (6 in 1 Type)
High Speed Power Switching
R07DS0338EJ0500
Rev.5.00
May 11, 2011
Features





For Automotive applications
AEC-Q101 compliant
N/P Channel MOS FET (6 in 1 Type). High density mounting
Low on-resistance
Capable of 4.5 V gate drive
Outline
RENESAS Package Code: PRSP0020DF-A
(Package Name: HSOP-20)
MOS6
Pch
MOS5
Pch
MOS4
Pch
19
S
14
S
11
S
20
G
17
G
12
G
D 3,18,21
2
G
R07DS0338EJ0500 Rev.5.00
May 11, 2011
D 5,6,15,16,22
7
G
D 8,13,23
10
G
S
1
S
4
S
9
MOS1
Nch
MOS2
Nch
MOS3
Nch
Page 1 of 11
RJM0404JSC
Preliminary
Pin Arrangement
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
21
Common Header
22
Common Header
23
Common Header
(Top View)
(Bottom View)
No.
1
2
3, 18
4
5, 6, 15, 16
7
8, 13
9
10
11
12
14
17
19
20
21
22
23
MOS1
MOS1
MOS1, 6
MOS2
MOS2, 5
MOS2
MOS3, 4
MOS3
MOS3
MOS4
MOS4
MOS5
MOS5
MOS6
MOS6
MOS1, 6
MOS2, 5
MOS3, 4
1
2
3
4
5
6
7
8
9
10
Source
Gate
Drain
Source
Drain
Gate
Drain
Source
Gate
Source
Gate
Source
Gate
Source
Gate
Drain (Header)
Drain (Header)
Drain (Header)
MOS6
Pch
MOS5
Pch
MOS4
Pch
19
S
14
S
11
S
20
G
17
G
12
G
D 3,18,21
2
G
D 5,6,15,16,22
7
G
D 8,13,23
10
G
S
1
S
4
S
9
MOS1
Nch
MOS2
Nch
MOS3
Nch
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
Value
MOS1, 2, 3 (Nch)
MOS4, 5, 6 (Pch)
VDSS
VGSS
ID
ID (pulse) Note1
IAP Note3
EAR Note3
Pch Note2
Tch Note4
Tstg
40
+20 / –5
20
80
20
53
54
175
–55 to +150
–40
–20 / +5
–20
–80
–20
53
54
175
–55 to +150
Unit
V
V
A
A
A
mJ
W
C
C
Notes: 1. PW  10s duty cycle  1%
2. Tc = 25C : 1 Drive Operation.
3. Tch = 25C, Rg  50 
4. AEC-Q101 compliant
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 2.78C/W
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Page 2 of 11
RJM0404JSC
Preliminary
Electrical Characteristics
 MOS1, MOS2, MOS3 (N Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Body-drain diode forward voltage
VDF
trr
Body-drain diode reverse recovery
time
Note:
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
17
24
1400
230
100
23
3
4
15
35
50
8
Max
10
10
2.5
21
34
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
—
—
0.92
20
1.2
—
V
ns
Test Conditions
VDS = 40 V, VGS = 0
VGS = +20 / –5 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VGS = 10 V Note5
ID = 10 A, VGS = 4.5 V Note5
VDS = 10V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 20 A
VGS = 10 V, ID = 10 A,
VDD  20 V,RL = 2 ,
RG = 4.7 
IF = 20 A, VGS = 0 Note5
IF = 20 A, VGS = 0
diF/dt = 50 A/s
5. Pulse test
 MOS4, MOS5, MOS6 (P Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Ciss
Coss
Crss
Qg
Qgs
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Qgd
td(on)
tr
td(off)
tf
VDF
Body-drain diode reverse recovery
time
Note:
trr
Min
—
—
–1.0
—
—
—
—
—
—
—
Typ
—
—
—
34
48
1500
230
140
25
5
Max
–10
10
–2.5
42
68
—
—
—
—
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
—
—
—
—
—
—
—
4
30
55
50
20
–0.97
30
—
—
—
—
—
–1.26
—
nC
ns
ns
ns
ns
V
ns
Test Conditions
VDS = –40 V, VGS = 0
VGS = –20 / +5 V, VDS = 0
VDS = –10 V, ID = –1 mA
ID = –10 A, VGS = –10 V Note6
ID = –10 A, VGS = –4.5 V Note6
VDS = –10 V, VGS = 0,
f = 1 MHz
VDD = –25 V, VGS = –10 V,
ID = –20 A
VGS = –10 V, ID= –10 A,
VDD  –20 V, RL =2 ,
RG = 4.7 
IF = –20 A, VGS = 0 Note6
IF = –20 A, VGS = 0
diF/dt = 50 A/s
6. Pulse test
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Page 3 of 11
RJM0404JSC
Preliminary
Main Characteristics
 MOS1, 2, 3 (Nch)
Typical Output Characteristics
Maximum Safe Operation Area
1000
20
Tc = 25°C
Pulse Test
10 V
10
Drain Current ID (A)
100
μs
10
0
μs
10
1
s
m
Drain Current ID (A)
Tc = 25°C
1 shot Pulse
1
PW = 10 ms
Operation
in this area
0.1 is limited RDS(on)
16
4.5 V
2.8 V
12
VGS = 2.7 V
8
4
DC Operation
0.01
0.1
1
10
100
0
Drain to Source Voltage VDS (V)
Drain Current ID (A)
1
0.1
Tc = 150°C
25°C
0.001
−40°C
0.0001
0
1
2
3
4
5
Static Drain to Source On State Resistance
RDS(on) (mΩ)
VDS = 10 V
Pulse Test
0.01
1000
Tc = 25°C
Pulse Test
100
VGS = 4.5 V
10 V
1
10
Drain Current ID (A)
R07DS0338EJ0500 Rev.5.00
May 11, 2011
8
10
50
ID = 10 A
Pulse Test
40
100
Tc = 150°C
30
20
25°C
−40°C
10
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source State On Resistance
vs. Drain Current
1
6
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
10
4
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
2
Static Drain to Source on State Resistance
vs. Temperature
50
ID = 10 A
Pulse Test
40
VSG = −4.5 V
30
20
−10 V
10
0
−50
−25 0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Page 4 of 11
RJM0404JSC
Preliminary
 MOS1, 2, 3(Nch)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10000
Ciss
1000
Coss
Crss
100
Tc = 25°C
VGS = 0
f = 1 MHz
50
10
20
30
VDS
8
VDD = 25 V
10 V
5V
10
8
16
24
4
0
40
32
Drain to Source Voltage VDS (V)
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR (A)
12
20
0
Tc = 25°C
Pulse Test
15
10
0
16
VDD = 25 V
10 V
5V
30
40
20
5
VGS
40
10
0
20
Tc = 25°C
ID = 20 A
VGS = 0 V, −5 V
10 V
0.4
0.8
1.2
1.6
2.0
100
IAP = 20 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100 125 150 175
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
VDS
Monitor
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
L
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V (BR)DSS
Rg
D. U. T
VDD
IAP
VDS
Vin
15 V
ID
50 Ω
0
R07DS0338EJ0500 Rev.5.00
May 11, 2011
VDD
Page 5 of 11
RJM0404JSC
Preliminary
 MOS1, 2, 3 (Nch)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 20 V
90%
td(on)
R07DS0338EJ0500 Rev.5.00
May 11, 2011
10%
tr
90%
td(off)
tf
Page 6 of 11
RJM0404JSC
Preliminary
 MOS4, 5, 6 (Pch)
Maximum Safe Operation Area
−20
Tc = 25°C
1 shot Pulse
Drain Current ID (A)
s
10
μ
10
Drain Current ID (A)
−100
0
μs
1
−10
m
s
PW = 10 ms
−1
−0.1
Operation
in this area
is limited RDS(on)
−0.01
−0.1
DC Operation
−1
−10
Drain Current ID (A)
−16
−100
−12
−8
−3.0 V
−4
0
−2
−4
−6
−8
−10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
−0.1
Tc = 150°C
−0.01
25°C
−0.001
−40°C
−1
−2
−3
−4
−5
100
Tc = 150°C
60
40
1000
Tc = 25°C
Pulse Test
VGS = −4.5 V
−10 V
10
1
−10
−1
Drain Current ID (A)
R07DS0338EJ0500 Rev.5.00
May 11, 2011
−100
25°C
−40°C
20
0
−4
−8
−12
−16
−20
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source On State Resistance
vs. Drain Current
ID = −10 A
Pulse Test
80
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
−3.5 V
Drain to Source Voltage VDS (V)
−1
100
−10 V
VGS = −2.5 V
−10 Pulse Test
VDS = −10 V
−0.0001
0
Tc = 25°C
Pulse Test
−4.5 V
Static Drain to Source On State Resistance
RDS(on) (mΩ)
−1000
Typical Output Characteristics
Static Drain to Source on State Resistance
vs. Temperature
100
ID = −10 A
Pulse Test
80
VGS = −4.5 V
60
40
−10 V
20
0
−50 −25 0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
Page 7 of 11
RJM0404JSC
Preliminary
 MOS4, 5, 6 (Pch)
Typical Capacitance vs.
Drain to Source Voltage
f = 1 MHz
VGS = 0
Ciss
1000
Coss
100
Crss
10
–10
–20
–30
–40
Reverse Drain Current IDR (A)
–20
–4
–8
VDS
VGS
–12
–30
VDD = –25 V
–10 V
–5 V
–40
–50
0
–16
Tc = 25°C
ID = –20 A
–20
8
16
24
32
40
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Energy vs.
Channel Temperature Derating
–20
Tc = 25°C
Pulse Test
–15
–10 V
VGS = 0 V, 5 V
–5
0
–10
Drain to Source Voltage VDS (V)
Repetitive Avalanche Energy EAR (mJ)
0
–10
0
VDD = –25 V
–10 V
–5 V
–0.5
–1.0
–1.5
–2.0
100
IAP = –20 A
VDD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100 125 150 175
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
VDS
Monitor
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
10000
Capacitance C (pF)
Dynamic Input Characteristics
0
L
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
D. U. T
VDD
IAP
VDS
Vin
–15 V
50 Ω
ID
0
R07DS0338EJ0500 Rev.5.00
May 11, 2011
VDD
Page 8 of 11
RJM0404JSC
Preliminary
 MOS4, 5, 6 (Pch)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Switching Time Waveform
Vin
10%
D.U.T.
Rg
Vin
–10 V
R07DS0338EJ0500 Rev.5.00
May 11, 2011
RL
90%
VDD
= –20 V
90%
90%
Vout
10%
td(on)
tr
10%
td(off)
tf
Page 9 of 11
RJM0404JSC
Preliminary
 Common
Power vs. Temperature Derating
Channel Dissipation
Pch (W)
100
80
60
40
20
0
50
100
Normalized Transient Thermal Impedance γs (t)
Case Temperature
200
150
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
1
D=1
0.5
0.2
0.1
0.0
5
0.1
θch - c(t) = γs (t) x θch - c
θch - c = 2.78°C/W, Tc = 25°C
1 Drive operation
0.02
0.01
1shot pulse
PDM
D=
PW
T
PW
T
0.01
10 μ
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Page 10 of 11
RJM0404JSC
Preliminary
Package Dimensions
JEITA Package Code
P-HSOP20-11x14.1-1.27
RENESAS Code
PRSP0020DF-A
15.9
*1
Previous Code
⎯
MASS[Typ.]
2.0g
NOTE)
1. DIMENSIONS"*1"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
12.1
±0.1
1.38
D
1.38
F
2.98
2.98
7.3
7.0
HE
*2
E
±0.15
11
8.2
20
Index mark
1
Z
10
e
*3
bp
Reference
Symbol
BOTTOM VIEW
x
M
bp
θ
0.2
1.28
1.26
A1
c
c1
A
3.35
1.71
b1
L
y
Terminal cross section
Detail F
D
E
A2
A1
A
bp
b1
c
c1
θ
HE
e
x
y
Z
L
L1
Dimension in Millimeters
Min Nom Max
13.95 14.1 14.25
10.9 11.0 11.1
0.01 0.05 0.10
3.6
0.40 0.47 0.53
0.45
0.28 0.32 0.37
0.30
0°
8°
14.0 14.2 14.4
1.27
0.25
0.1
1.8
0.65 0.8 0.95
Ordering Information
Orderable Part Number
RJM0404JSC-00-12
700 pcs
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Quantity
Shipping Container
Tray
Page 11 of 11
Notice
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Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
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