2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. A B C D E F G H J K CLASSIFICATION OF hFE Product-Rank 2SD1468-Q 2SD1468-R 2SD1468-S Range 120~270 180~390 270~560 1 Emitter 2 Collector 3 Base Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC TJ, TSTG 30 15 5 1 625 150, -55~150 V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 26-Mar-2012 Rev. A Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob 30 15 5 120 50 - - 0.5 0.5 560 0.4 30 V V V µA µA V MHz pF Test Condition IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 VCE=3V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1