2SD1898

2SD1898
NPN Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
Description
SOT-89
The 2SD1898 is designed for switching applications.
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
A
B
C
D
E
F
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
VEBO
5.0
V
IC
1
A
Collector Current
ICP (Single pulse Pw=20ms)
2
A
PD
500
mW
Total Power Dissipation
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
100
-
-
V
IC=50uA
Test Conditions
BVCEO
80
-
-
V
IC=1mA
BVEBO
5
-
-
V
IE=50uA
ICBO
-
-
1
uA
VCB=80V
IEBO
-
-
1
uA
VEB=4V
VCE(sat)
-
-
400
mV
hFE
82
-
390
fT
Cob
100
-
MHZ
-
25
-
pF
IC=500mA, IB=20mA
VCE=3V, IC=500mA
VCE=10V,IC=50mA,f=100MHZ
VCB=10V,IE=0, f=1MHz
Classification Of hFE
Rank
P
Q
R
hFE
82-180
120-270
180-390
Marking Code : DF
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
2SD1898
NPN Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2