STB1277 -2A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. High hFE and Good Linearity CLASSIFICATION OF hFE Product-Rank STB1277-O STB1277-Y Range 100~200 160~320 1Emitter 2Collector 3Base Collector 2 3 REF. Base A B C D E 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -30 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -2 A Collector Power Dissipation PC 0.625 W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage V(BR)CBO -30 - - V IC= -0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -1mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µA VCB= -30V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 µA VEB= -5V, IC=0 DC Current Gain hFE 100 - 320 Collector to Emitter Saturation Voltage VCE(sat) - - -0.8 V IC= -2A, IB= -0.2A Base to Emitter Saturation Voltage VBE(sat) - - -1 V IC= -500mA, VCE= -2V fT - 170 - MHz Cob - 48 - pF Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 08-May-2013 Rev. A Test condition VCE= -2V, IC= -500mA VCE= -5V, IC= -50mA VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1