SSDF9504 23A, 40V, RDS(ON) 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-252-4L The SSDF9504 provide the designer with best combination of fast switching, low on-resistance and cost effectiveness. The SSDF9504 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. FEATURES Low Gate Charge Low On-resistance MARKING CODE 9504 = Date Code PACKAGE INFORMATION Millimeter Min. Max. 6.4 6.8 9.4 10.2 5.4 5.8 2.4 3.0 1.27 REF. REF. Package MPQ Leader Size TO-252-4L 2.5K 13 inch A B C D E Millimeter Min. Max. 0.4 0.6 2.2 2.4 0.45 0.55 1.4 1.8 0.8 1.2 REF. F G H I J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Ratings Symbol Unit N-Channel P-Channel Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V 23 -20 18 -16 IDM 45 -44 A EAS 28 66 mJ IAS 17.8 -27.2 A TA =25°C Continuous Drain Current @ VGS=10V 1 TA =100°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 Avalanche Current Power Dissipation 4 Maximum Junction to Ambient 1 Maximum Junction to Case 1 Operating Junction & Storage Temperature Range http://www.SeCoSGmbH.com/ 14-Nov-2012 Rev. B ID A PD 25 W RθJA 62 °C / W RθJC 5 °C / W TJ, TSTG -55~150 °C Any changes of specification will not be informed individually. Page 1 of 7 SSDF9504 23A, 40V, RDS(ON) 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch BVDSS VGS(th) gfs IGSS Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance http://www.SeCoSGmbH.com/ 14-Nov-2012 Rev. B - - -40 - - 1 - 2.5 -1 - -2.5 - 8 - - 12.6 - - - ±100 - - ±100 - - 1 P-Ch - - -1 N-Ch IDSS - - 5 - - -5 Unit V V S nA Test Conditions VGS=0, ID=250μA VGS=0, ID= -250μA VDS=VGS, ID=250μA VDS=VGS, ID= -250μA VDS=5V, ID=12A VDS= -5V, ID= -8A VGS= ±20V VGS= ±20V VDS=32V, VGS=0, TJ=25°C μA VDS= -32V, VGS=0, TJ=25°C VDS=32V, VGS=0, TJ=55°C VDS= -32V, VGS=0 , TJ=55°C N-Ch - - 26 VGS=10V, ID=6A P-Ch - - 40 VGS= -10V, ID= -6A - - 35 - - 65 - 5.5 - - 9 - - 1.25 - - 2.54 - - 2.5 - - 3.1 - - 8.9 - - 19.2 - - 2.2 - - 12.8 - - 41 - - 48.6 - N-Ch RDS(ON) P-Ch Total Gate Charge 40 Max. N-Ch P-Ch Drain-Source On-Resistance 2 Min. Typ. Static N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg - 2.7 - - 4.6 - - 593 - - 1004 - - 76 - - 108 - - 56 - - 80 - - 2.6 5.2 - 13 16 mΩ VGS=4.5V, ID=4A VGS= -4.5V, ID= -4A N-Channel VDS=20V, VGS=4.5V, ID=12A nC P-Channel VDS= -20V, VGS= -4.5V, ID= -12A N-Channel VDD=20V, RG=3.3Ω,RD=20Ω VGS=10V, ID=1A nS P-Channel VDD= -15V, RG=3.3Ω, RD=20Ω VGS= -10V, ID= -1A N-Channel VGS=0, VDS=15V, f=1.0MHz pF P-Channel VGS=0, VDS= -15V, f=1.0MHz Ω VDS=VGS=0, f=1.0MHz Any changes of specification will not be informed individually. Page 2 of 7 SSDF9504 23A, 40V, RDS(ON) 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Guaranteed Avalanche Chatacteristics Single Pulse Avalanche Energy 5 N-Ch P-Ch EAS 9 - - 20 - - mJ VDD=25V, L=0.1mH, IAS=10A VDD= -25V, L=0.1mH, IAS= -15A Source-Drain Diode N-Ch Forward On Voltage2 P-Ch Continuous Source Current 1,6 Pulsed Source Current 2,6 N-Ch P-Ch N-Ch P-Ch VSD IS ISM - - 1.2 - - -1 - - 23 - - -20 - - 45 - - -44 V IS=1A, VGS=0, TJ=25°C IS= -1A, VGS=0, TJ=25°C A VD=VG=0, Force Current A Notes: 1 Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2 Pulse width≦300μs, duty cycle≦2%. 3 The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A 4 .The power dissipation is limited by 150 ℃junction temperature 5 The Min. value is 100% EAS tested guarantee. 6 The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ 14-Nov-2012 Rev. B Any changes of specification will not be informed individually. Page 3 of 7 SSDF9504 Elektronische Bauelemente 23A, 40V, RDS(ON) 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (N-Channel) http://www.SeCoSGmbH.com/ 14-Nov-2012 Rev. B Any changes of specification will not be informed individually. Page 4 of 7 SSDF9504 Elektronische Bauelemente 23A, 40V, RDS(ON) 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (N-Channel) http://www.SeCoSGmbH.com/ 14-Nov-2012 Rev. B Any changes of specification will not be informed individually. Page 5 of 7 SSDF9504 Elektronische Bauelemente 23A, 40V, RDS(ON) 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (P-Channel) http://www.SeCoSGmbH.com/ 14-Nov-2012 Rev. B Any changes of specification will not be informed individually. Page 6 of 7 SSDF9504 Elektronische Bauelemente 23A, 40V, RDS(ON) 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (P-Channel) http://www.SeCoSGmbH.com/ 14-Nov-2012 Rev. B Any changes of specification will not be informed individually. Page 7 of 7