SMG2330N 5.2A, 30V, RDS(ON) 32mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A L 3 3 C B Top View 1 1 2 K E 2 D FEATURES F Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications H G REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ Leader Size SC-59 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 30 V Continuous Gate-Source Voltage VGSS ±20 V Continuous Drain Current TA=25°C 1 5.2 TA=70°C Pulsed Drain Currentb 2 Continuous Source Current (Diode Conduction) Power Dissipationa A ID 1 4.1 IDM 30 A IS 1.6 A TA=25°C 1 1.3 PD TA=70°C Junction and Storage Temperature Range W 0.8 TJ, Tstg -55~150 °C 100 °C / W 166 °C / W Thermal Resistance Rating 1 t≦5 sec Maximum Junction to Ambient RθJA Steady-State Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature http://www.SeCoSGmbH.com/ 4-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2330N 5.2A, 30V, RDS(ON) 32mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Typ. Max. Unit 20 - - A - - 1 Min. Teat Conditions Static On-State Drain Current 1 ID(on) Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage 1 Drain-Source On Resistance Forward Transconductance Diode Forward Voltage 1 IDSS µA VDS=5V, VGS=10V VDS=24V , VGS=0 - - 25 IGSS - - ±100 nA VGS=20V, VDS=0 VGS(th) 1 - - V VDS=VGS, ID=250µA - - 32 RDS(ON) VDS= 24V, VGS=0, TJ=55°C mΩ VGS=10V, ID=5.2A - - 64 gFS - 40 - S VDS=15V,,ID=5.2A VSD - 0.7 - V IS=2.3 A, VGS=0 Dynamic VGS=4.5V, ID=3.7A 2 Total Gate Charge Qg - 4.0 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 1.4 - Turn-On Delay Time Td(ON) - 16 - Turn-Off Delay Time Td(OFF) - 23 - Rise Time Tr - 5 - Fall-Time Tf - 3 - nC VDS=15V, VGS=4.5V, ID=5.2A nS VDD=25V, RL=25Ω , ID=1A, VGEN=10V Notes: 1. Pulse test: PW <= 300us duty cycle <= 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 4-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2