Preliminary RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) G 1 2 3 E Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6 Symbol Ratings Unit VCES VGES 600 ±30 60 30 120 100 235.8 0.53 150 –55 to +150 V V A A A A W °C/W °C °C IC Note1 IC Note1 ic(peak) Note1 iDF(peak) Note2 PC θj-c Tj Tstg RJH60F4DPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time C-E diode forward voltage C-E diode reverse recovery time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 VECF2 trr Notes: 3. Pulse test REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 2 of 6 Min ⎯ ⎯ 4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.4 1.7 1945 93 33 30 32 65 80 1.6 1.8 140 Max 100 ±1 8 1.82 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.1 ⎯ ⎯ Unit μA μA V V V pF pF pF ns ns ns ns V V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 30 A, VGE = 15V Note3 IC = 60 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300V VGE = 15V Note3 Rg = 5 Ω IF = 20 A Note3 IF = 40 A Note3 IF = 20 A diF/dt = 100 A/μs RJH60F4DPK Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics Collector Current IC (A) 120 100 10 PW 10 μs = 0 10 μs 1 0.1 Ta = 25°C 1 shot pulse 0.01 10 100 10 V 9.5 V 15 V 60 9V 40 8.5 V 20 1 0 2 3 5 4 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 100 VCE = 10 V Pulse Test 80 60 Tc = 75°C 40 25°C 20 –25°C 0 0 2 4 6 8 10 3.0 Ta = 25°C Pulse Test 2.4 30 A 1.8 IC = 15 A 0.6 0 0 2.4 2.0 VGE = 15 V Pulse Test IC = 60 A 1.6 30 A 15 A 1.2 0.8 0.4 0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 3 of 6 4 8 16 12 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 60 A 1.2 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 11 V 12 V 80 1000 120 Collector Current IC (A) 100 0 1 Ta = 25°C Pulse Test VGE = 8 V Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Case Temperature (Typical) 8 VCE = 10 V 7 6 5 IC = 10 mA 4 1 mA 3 2 1 0 -25 0 25 50 75 100 125 150 Junction Temperature Tj (°C) RJH60F4DPK Preliminary Typical Capacitance vs. Colloctor to Emitter Voltage Collector to Emitter Diode Forward Voltage vs. Diode Forward Current Characteristics (Typical) 10000 VGE = 0 V Pulse Test Cies 80 Capacitance C (pF) Diode Forward Current IF (A) 100 60 40 20 0 1 2 3 4 Cres 10 VGE = 0 V f = 1 MHz Ta = 25°C VCE 12 VCE = 600 V 300 V 400 8 200 4 VCE = 600 V 300 V 0 20 40 60 IC = 30 A 80 100 150 200 250 300 1000 Switching Time t (ns) 16 VGE 600 50 Switching Characteristics (Typical) (1) Gate to Emitter Voltage VGE (V) 800 0 Colloctor to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Colloctor to Emitter Voltage VCE (V) Coes 5 Collector to Emitter Diode Forward Voltage VECF (V) VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C tf 100 td(off) td(on) 10 tr 1 0 100 1 10 100 1000 Gate Charge Qg (nC) Colloctor Current IC (A) Switching Characteristics (Typical) (2) Switching Characteristics (Typical) (3) 1000 1000 IC = 30 A, RL = 10 Ω VGE = 15 A, Ta = 25°C 100 Switching Time t (ns) Switching Time t (ns) 100 1 0 0 1000 tf tr td(off) td(on) IC = 30 A, VGE = 15 A RL = 10 Ω, Rg = 5 Ω tf 100 td(off) tr td(on) 10 10 1 10 Gate Resistance Rg (Ω) REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 4 of 6 100 0 20 40 60 80 100 120 140 Case Temperature Tc (°C) RJH60F4DPK Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.05 θj − c(t) = γs (t) • θj − c θj − c = 0.53 °C/W, Tc = 25 °C 1 shot pulse 0.02 0.01 PDM 0.1 D= PW T PW T 0.01 10 μ 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C D=1 1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 2 0.0 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Ic Monitor 90% RL Vin Vin Monitor 10% 90% Rg D.U.T. 90% VCC Vin = 15 V Ic tr ton REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 5 of 6 10% 10% td(on) td(off) tf toff RJH60F4DPK Preliminary Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Ordering Information Part No. RJH60F4DPK-00-T0 Quantity 360 pcs REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. 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