EClamp8052P EMIClamp® 2-Line Common Mode Filter and Low Capacitance ESD Protection PROTECTION PRODUCTS Description Features EClamp®8052P integrates common mode filtering with low capacitance ESD protection and is designed specifically for MIPI, MHL, and USB interfaces. Each device provides filtering and ESD protection for one high-speed differential pair. • Transient Protection to IEC 61000-4-2 (ESD) 30kV (Air), 25kV (Contact) IEC 61000-4-4 (EFT) 4kV (5/50ns) IEC 61000-4-5 (Lightning) 6A (8/20µs) ISO-10605 (ESD) 30kV (Air), 25kV (Contact) • Qualified to AEC-Q100, Grade 1 • Package design optimized for high speed lines • ESD protection and common mode filtering for two high-speed lines • High differential bandwidth cutoff frequency • Low ESD Clamping Voltage • Dynamic Resistance: 0.50 Ohms (Typ) • Solid-State Silicon-Avalanche Technology Mechanical Characteristics • • • • • • SGP1917N5 package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 1.9 x 1.70 x 0.55 mm Molding Compound Flammability Rating: UL 94V-0 Marking : Marking Code + Date Code Packaging : Tape and Reel EClamp8052P is in a 7-pin SGP1917N5 package, measuring 1.9 x 1.7mm with a nominal height of 0.55mm. The leads have a nominal pin-to-pin pitch of 0.50mm. Flow- through package design simplifies PCB layout and maintains signal integrity on high-speed lines. Applications Circuit Diagram Pin Configuration I/O+ Out I/O- Out I/O- In GND EClamp8052P Final Datasheet May 7, 2015 Rev 4.0 Automotive Applications Industrial Equipment USB 2.0 / USB 3.0 HDMI / MHL MIPI Camera Serial Interface (CSI) MIPI Display Serial Interface (DSI) External Side Towards Connector I/O+ In • • • • • • www.semtech.com I/O+ In I/O- In 1 I/O+ Out I/O- Out GND Internal Side Towards IC EClamp8052P is an easily implemented solution for replacing discrete common mode chokes and ESD protection devices in a single package. These devices utilize silicon avalanche technology for superior ESD and TLP clamping performance. They feature high maximum ESD withstand voltage of +/- 25kV contact, +/-30kV air discharge per IEC 61000-4-2. The integrated common-mode choke has a typical differential mode cutoff frequency >3GHZ and typical common mode suppression of 10dB at 500MHz and 15dB from 1GHz to 2.8GHz. Each channel series resistance is 1.8 Ohms maximum. Page 1 Semtech Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Current (tp = 8/20µs) IPP 6 A ESD per IEC 61000-4-2 (Contact) ESD per IEC 61000-4-2 (Air)(1) VESD ±25 ±30 kV ESD per ISO-10605 (Contact)(2) ESD per ISO-10605 (Air)(2) VESD ±25 ±30 kV Operating Temperature TJ -40 to +125 O Storage Temperature TSTG -55 to +150 O (1) C C Electrical Characteristics (T=25OC unless otherwise specified) Parameter Symbol Conditions Reverse Stand-Off Voltage Reverse Breakdown Voltage VRWM VBR Min. Typ. -40OC to 125OC Pin 1 or Pin 2 to Pin 3 It = 1mA, Pin 1 or 2 to Pin 3 -40OC to 125OC VRWM = 5V T = 25OC 6.5 Max. Units 5 V 9 11 V 0.005 0.100 μA Reverse Leakage Current IR Clamping Voltage VC IPP = 1A, tp = 8/20µs, Pin 1 or 2 to Pin 3 12 V Clamping Voltage VC IPP = 6A, tp = 8/20µs, Pin 1 or 2 to Pin 3 17 V ESD Clamping Voltage(3) VC IPP = 4A, tp = 0.2/100ns (TLP) Pin 1 or 2 to Pin 3 11 V ESD Clamping Voltage(3) VC IPP = 16A, tp = 0.2/100ns (TLP) Pin 1 or 2 to Pin 3 17 V Dynamic Resistance(3), (4) RDYN tp = 0.2/100ns (TLP) Pin 1 or 2 to Pin 3 0.50 Ohms Total Channel Capacitance CIN VR = 0V, f = 1MHz Pin 1 or 2 to Pin 3 Differential (SDD21) Cut-Off Frequency f3dB 50 Ohm Source and Load Termination 3 GHz f = 75MHz 3 dB f = 500MHz 10 dB f = 1GHZ - 2.5GHz 20 dB Input to Output 1.3 Common Mode (SCC21) Attenuation fATT Channel Resistance RCH T = 25OC 0.95 1.2 1.8 pF Ohms Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): ESD Gun return path to Horizontal Coupling Plane (HCP); Test conditions: a)150pF/330pF, 330W b) 150pF/330pF, 2kW (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and V TLP averaging window: t1 = 70ns to t2 = 90ns. (4): Dynamic resistance calculated from ITLP = 4A to ITLP = 16A EClamp8052P Final Datasheet May 7, 2015 Rev 4.0 www.semtech.com Page 2 Semtech Typical Characteristics Common Mode Attenuation vs. Frequency 0 0 -1 -5 -2 -10 -3 -15 Insertion Loss (dB) Insertion Loss (dB) Differential Mode Attenuation vs. Frequency -4 -5 -6 -7 -20 -25 -30 -35 -8 -40 -9 -45 -10 0.01 0.1 1 -50 0.01 10 0.1 Frequency (GHz) Junction Capacitance vs. Reverse Voltage Junction Capacitance vs. Temperature 0.99 1.6 0.98 1.4 f = 1Mhz Any Pin to GND Normalized to 25OC 1.2 0.97 1.0 0.96 Capacitance ‐ CJ (pF) Capacitance ‐ CJ (pF) 1 Frequency (GHz) 0.95 0.94 f = 1Mhz Any Pin to GND TA = 25OC 0.93 0.6 0.4 VR = 0V VR = 5V 0.2 EC8052P_AR_CJvT EC8052P_AR_CJvV 0.92 0 0.8 1 2 3 4 Reverse Voltage ‐ VR (V) 5 0.0 6 ‐50 Channel DC Resistance vs. Temperature ‐25 0 25 50 75 Temperature (°C) 100 125 150 Breakdown Voltage (VBR) vs. Temperature 8.70 2.0 Any Pin to GND IBR = 1mA Pin1 to 5 or 2 to 4 8.65 Breakdown Voltage ‐ VBR (V) Channel DC Resistance ‐ RCH (Ω) 1.5 1.0 0.5 8.60 8.55 8.50 EC8052P_AR_VBR EC8052P_AR_RCH 8.45 0.0 ‐50 EClamp8052P Final Datasheet May 7, 2015 0 50 Temperature (OC) Rev 4.0 100 150 www.semtech.com ‐50 ‐25 0 25 50 75 Temperature (OC) 100 125 150 Page 3 Semtech Typical Characteristics ESD Clamping (+8kV Contact per IEC 61000-4-2) 150 ESD Clamping (-8kV Contact per IEC 61000-4-2) 0 Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane. Pin1 or 2 to GND,TA = 25OC 130 ‐20 ‐40 Clamping Voltage ‐ VC (V) Clamping Voltage ‐ VC (V) 110 90 70 50 ‐60 ‐80 ‐100 30 Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane. Pin1 or 2 to GND,TA = 25OC ‐120 10 ‐140 EC8052P_AR_ESDN8 EC8052P_AR_ESDP8 ‐10 ‐10 0 10 20 30 40 Time (ns) 50 60 70 ‐160 80 ‐10 0 TLP Characteristic (Positive) 30 50 60 70 80 TA = 25OC TP = 100ns TR = 0.2ns 0.7TP < TSAMPLE < 0.9TP ‐5 ‐10 IDUT (A) IDUT (A) 30 40 Time (ns) 0 20 15 ‐15 10 ‐20 5 ‐25 EC8052P_AR_TLPP 0 0 5 10 15 VDUT (V) 20 25 EC8052P_AR_TLPN ‐30 30 ‐25 ‐20 ‐15 ‐10 ‐5 0 VDUT (V) Clamping Voltage vs. Peak Pulse Current (tp=8/20us) Reverse Leakage vs. Temperature 10 20 TA = 25OC tr = 8µs td = 20µs Surge applied and measured on same pin 16 14 VR = 5V Any Pin to GND 8 Leakage Current ‐ IL (nA) 18 Clamping Voltage ‐VC (V) 20 TLP Characteristic (Negative) TA = 25OC TP = 100ns TR = 0.2ns 0.7TP < TSAMPLE < 0.9TP 25 10 I/O IN (Input Side) 12 10 8 6 4 6 4 2 2 EC8052P_AR_8_20 EC8052P_AR_IR 0 0 1 EClamp8052P Final Datasheet May 7, 2015 2 3 4 Peak Pulse Current ‐ IPP (A) Rev 4.0 5 6 7 0 25 www.semtech.com 40 55 70 85 100 Temperature (OC) 115 130 145 Page 4 Semtech Application Information USB Interface Protection EClamp8052P may be used to protect D+ and D- lines against ESD and EMI in USB 2.0, USB 3.0, and USB 3.1 applications. USB D+ and D- lines enter at pins 1 and 2 (connector side) and exit at pins 4 and 5. The TVS diodes are internally connected at pins 1 and 2 and therfore must be located towards the connector on the PCB. Pin 3 is connected to the ground plane. Figures 1 is an example of protecting a USB 3.0 Type-A interface (host side shown). For USB 3.0 applications, RClamp3324T is recommended for protecting the 5Gb/s SuperSpeed line pairs. Lines are routed through the device at pins 1-4. Traces should be kept the same length to avoid impedance mismatch. Ground is connected at pins 5 and 6. The differential impedance of each pair can be controlled for USB 3.0 (85 Ohms +/-15%) while maintaining a minimum trace-totrace and trace-to-pad spacing. Individual PCB design constraints may necessitate different spacing or trace width. Both ground pads should be connected for optimal performance. Ground connection is made using filled via-in-pad. Additional information may be found on the device data sheet. Single line devices such as uClamp0571P are recommended for surge and ESD protection of the VBus line. This device features high surge and ESD capability and may be used on 5V power rails. Device Placement Placement of the protection component is a critical element for effective ESD suppression. TVS diodes should be placed as close to the connector as possible. This helps reduce transient coupling to nearby traces. Ground connections should be made directly to the ground plane using micro-vias. This reduces parasitic inductance in the ground path and minimizes the clamping voltage seen by the protected device. EClamp8052P 5 1 R D+ D- 4 2 SSRX- R 3 SSRX+ RClamp3324T GND USB 3.0 Transceiver GND SSTXVBus SSTX+ uClamp0571P USB 3.0 - Type A Host Connector Figure 1 - USB 3.0 Type-A Protection Example EClamp8052P Final Datasheet May 7, 2015 Rev 4.0 www.semtech.com Page 5 Semtech Application Information VBus uClamp0571P EClamp8052P Vcc DM MHLUSB- DP MHL+ USB+ GND ID CBus/ID GND uUSB Connector uClamp0511P D+ DUSB 2.0 ID Applications Processor MHL+ MHL- HD Video CBus GND MHL Applications Processor USB/MHL Multiplexer Figure 2 - USB2.0 / MHL Interface Protection Applications Processor EClamp8052P x 3 FLEX Foil Connector MIPI Lane Management CLK+ CLKD0+ D0D1+ Camera Module D1- Figure 3 - MIPI Camera Serial Interface Protection EClamp8052P Final Datasheet May 7, 2015 Rev 4.0 www.semtech.com Page 6 Semtech Outline Drawing - SGP1917N5 A B D DIM A A1 b D E e L N aaa bbb E PIN 1 INDICATOR (LASER MARK) A DIMENSIONS MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 See Note 2 0.15 0.20 0.25 1.85 1.90 1.95 1.65 1.70 1.75 0.50 BSC 0.35 0.40 0.45 5 0.08 0.10 SEATING PLANE aaa C C A1 D/2 1 2 LxN (0.025-0.075) E/2 N e bxN bbb C A B NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. A1 BOTTOM SOLDER MASK ( 0.020+/-0.007 ) SOLDER PAD ( 0.018+/-0.005) Land Pattern - SGP1917N5 P DIMENSIONS (C) Z G Y DIM C G P X Y Z MILLIMETERS (1.50) 0.75 0.50 0.25 0.75 2.25 X NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. EClamp8052P Final Datasheet May 7, 2015 Rev 4.0 www.semtech.com Page 7 Semtech Marking Code PIN 1 INDICATOR (LASER MARK) 82P YW YW = Alphanumeric character Date Code Tape and Reel Specification - Plastic Tape, 4mm Pitch Pin1 Location (towards sprocket holes ) 82P YW 82P YW Ordering Information Part Number EClamp8052P.TCT Qty per Reel 3000 Reel Size 7 Inch Carrier Tape Plastic Pitch 4mm EMIClamp and EClamp are trademarks of Semtech Corporation. EClamp8052P Final Datasheet May 7, 2015 Rev 4.0 www.semtech.com Page 8 Semtech IMPORTANT NOTICE Information relating to this product and the application or design described herein is believed to be reliable, however such information is provided as a guide only and Semtech assumes no liability for any errors in this document, or for the application or design described herein. Semtech reserves the right to make changes to the product or this document at any time without notice. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Semtech warrants performance of its products to the specifications applicable at the time of sale, and all sales are made in accordance with Semtech’s standard terms and conditions of sale. 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Semtech reserves the right to make changes to, or discontinue any products described in this document without further notice. Semtech makes no warranty, representation or guarantee, express or implied, regarding the suitability of its products for any particular purpose. All rights reserved. © Semtech 2015 Contact Information Semtech Corporation 200 Flynn Road, Camarillo, CA 93012 Phone: (805) 498-2111, Fax: (805) 498-3804 www.semtech.com EClamp8052P Final Datasheet May 7, 2015 Rev 4.0 Page 9 Semtech