3DA752

RoHS
3DA752
3DA752
FEATURES
Power dissipation
1. BASE
PCM:
1.2
W (Tamb=25℃)
2. COLLECTOR
Collector current
ICM:
2
A
Collector-base voltage
V(BR)CBO:
40
V
Operating and storage junction temperature range
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
IC
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
C
E
L
Collector cut-off current
Emitter cut-off current
DC current gain
E
J
E
W
2
3
conditions
MIN
TYP
MAX
Ic=100µA, IE=0
40
V
Ic=10mA, IB=0
30
V
IE=1m A, IC=0
5
V
VCB=40V, IE=0
0.1
µA
IEBO
VEB=5V, IC=0
0.1
µA
hFE(1)
VCE=2V, IC=500mA
VCE(sat)1
IC=2A, IB=0.2A
0.8
V
VCE(sat)2
IC=1.5A, IB=30mA
2
V
fT
VCE=5V, IC=500mA
120
MHz
Cob
VCB=10V, IE=0, f=1MHz
13
pF
100
400
CLASSIFICATION OF hFE(1)
Rank
Range
O
Y
G
100-200
160-320
200-400
Marking
WEJ ELECTRONIC CO.
UNIT
ICBO
Collector-emitter saturation voltage
Collector output capacitance
O
Test
R
T
V(BR)CBO
N
O
unless otherwise specified)
Symbol
Collector-base breakdown voltage
C
1
TJ, Tstg: -55℃ to +150℃
Transition frequency
D
T
,. L
TO-251
TRANSISTOR (NPN)
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