MB1S

RoHS
MB1S THRU MB 1 0 S
SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampe
D
T
,. L
FEATURES
Surage overload rating-30 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position:Any
O
Weight:0.5 gram
MECHANICAL DATA
C
Epoxy:Device has UL flammability classification 94V-0
UL Iisted the recognized component directory,file#E94233
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
O
R
T
For capacitive load ,derate current by 20%.
IC
N
Dimensions in millimeters
Absolute Maximum Ratings (At Ta=25 o C unless otherwise noted)
RATINGS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
C
E
L
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Rectified
o
MB10S
NITS
400
600
800
1000
V olts
140
280
420
560
700
V olts
200
400
600
800
1000
V olts
MB2S
MB4S
V RRM
100
200
V RMS
70
100
V DC
glass-epoxy P.C.B.(NOTE1)
Current at TA=30 C -on
-on aluminum substrate(NOTE2)
MB6S MB8S
MB1S
I (AV)
0.5
0.8
I FSM
30
A mp
Peak Forward Surge Current8.3ms single half
E
sine-wave superimposed onrated
load (JEDEC method)
J
E
Operating and Storage Temperature Range
A mps
O
-55 to + 150
T J, T STG
C
ELECTRICAL CHARACTERISTICS (At Ta=25 o C unless otherwise noted)
SYMBOL MB1S
CHARACTERISTICS
W
Maximum Forward Voltage Drop per
Bridge Element at 0.5A DC
Maximum Reverse Current ar rated
DC Blocking Voltage per element
MB2S
MB4S
VF
O
@TA=25 C
O
@TA=125 C
IR
MB6S
MB8S
MB10S
UNITS
1.05
V olts
10
uAmps
mAmps
0.5
NOTE:
1.On glass-epoxy P. C.B.mounted on 0.05X0.05 ＂ (1.3X1.3mm)pads
2.On aluminum substrate P.C.B.with an area of 0.8X0.8X0.25 ＂ (20X20X6.4mm)mounted on 0.05X0.05 ＂ (1.27X1.27mm)solder pad.
3.Suffix. ＂ S ＂ Surface Mount for Mini Dip Bridge.
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn
E-mail:[email protected]
RoHS
MB1S THRU MB 10S
INSTANTANEOUS FORWARD CURRENT,(A)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
2.4
1
O
TL=150 C
(TYP)
O
TL=25 C
(TYP)
0.5
0.2
0.1
0.05
POWER DISSIPATION pF(w)
2
Pulse test
per one diode
0.2
0.4
0.6
0.8
1
1.6
1.2
IC
N
0.8
0.4
1.2
O
R
T
0
25
20
J
E
W
AVERAGE FORWARD CURRENT,(A)
PEAK FORWARD SURGE CURRENT(A)
IF SM
30
15
10
E
8.3ms
8.3ms
1 cycle
non-repetitive
O
Tj=25 C
5
0
1
2
5
10
20
50
C
0.4
0.6
0.8
1
TYPICAL FORWARD CURRENT
DERATING CURVE
SURGE FORWARD CURRENT CAPABILITY
35
0.2
O
AVERAGE RECTIFIED FORWARD CURRENT,to(A)
INSTANTANEOUS FORWARD VOLTAGE,(V)
C
E
L
Sine wave
O
Tj=150 C
2
0
0
D
T
,. L
POWER DISSIPATION
100
NUMBER OF CYCLE
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn
1.4
Sine wave
R-icad
free in air
1.2
1.0
0.8
On aluminum
substrate
0.6
0.4
On giass
-epoxy substrate
0.2
0
0
40
80
120
160
O
AMBIENT TEMPERATURE,( C)
E-mail:[email protected]