8550S TRANSISTOR (PNP) FEATURE Excellent hFE linearity

8550S
8550S TRANSISTOR (PNP)
TO-92
FEATURE
Excellent hFE linearity
1.
EMITTER
2.
COLLECTOR
3.
BASE
1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
PC
Collector Dissipation
625
mW
TJ
Junction Temperature
150
℃
Tstg
Junction and Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= -100uA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-25
V
Collector cut-off current
ICBO
VCB= -40V, IE=0
-0.1
uA
Collector cut-off current
ICEO
VCE= -20V,IB=0
-0.1
uA
Emitter cut-off current
IEBO
VEB= - 3V, IC=0
-0.1
uA
hFE(1)
VCE= -1V, IC= -50mA
85
hFE(2)
VCE= -1V, IC= -500mA
50
VCE(sat)
IC=-500mA, IB=-50mA
-0.6
V
VBE(sat)
IC=-500mA, IB=-50mA
-1.2
V
400
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE=- 6V, IC=-20mA
fT
Transition frequency
150
f =30MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
B
C
D
D3
Range
85-160
120-200
160-300
300-400
Typical Characteristics
8550S