RoHS 3DD13002 3DD13002 D T ,. L TO-126 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1.BASE Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2.COLLECTOR 3.EMITTER TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol IC N C O 123 unless otherwise specified) O Test R T conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA, IB=0 400 V V(BR)EBO IE= 100µA, IC=0 6 V ICBO VCB= 600V, IE=0 100 µA IEBO VEB= 6V, IC=0 100 µA hFE(1) VCE= 10V, IC= 250 µA 5 hFE(2) VCE= 10 V, IC= 200 mA 9 Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=40 mA 0.8 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40 mA 1.1 V Transition frequency fT VCE=10V, Ic=100mA f =1MHz Fall time tf IC=1A, IB1=-IB2=0.2A 0.5 µs Storage time ts VCC=100V 2.5 µs C E L Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain J E E W 40 5 MHz CLASSIFICATION OF hFE(2) Rank Range 9-15 15-20 WEJ ELECTRONIC CO. 20-25 Http:// www.wej.cn 25-30 30-35 35-40 E-mail:[email protected]