PBSS5160T 60 V, 1 A PNP low V_CEsat (BISS) transistor

PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160T.
1.2 Features
„
„
„
„
„
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency due to less heat generation
Reduces Printed-Circuit Board (PCB) area required
Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
„ Major application segments:
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management:
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver:
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load drivers (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
−60
V
-
-
−1
A
-
-
−2
A
-
220
330
mΩ
VCEO
collector-emitter voltage
IC
collector current
ICM
peak collector current
t = 1 ms or limited
by Tj(max)
RCEsat
collector-emitter
saturation resistance
IC = −1 A;
IB = −100 mA
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[1]
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
emitter
3
collector
Simplified outline
Graphic symbol
3
3
1
1
2
2
006aab259
3. Ordering information
Table 3.
Ordering information
Type number
PBSS5160T
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PBSS5160T
*U6
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCBO
Min
Max
Unit
collector-base voltage open emitter
-
−80
V
VCEO
collector-emitter
voltage
open base
-
−60
V
VEBO
emitter-base voltage
open collector
-
−5
V
IC
collector current
[1]
-
−0.9
A
[2]
-
−1
A
-
−2
A
-
−300
mA
-
−1
A
ICM
peak collector current
IB
base current
IBM
peak base current
Conditions
t = 1 ms or limited
by Tj(max)
tp ≤ 300 μs; δ ≤ 0.02
PBSS5160T_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
2 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Ptot
total power dissipation Tamb ≤ 25 °C
Min
Max
Unit
[1]
-
270
mW
[2]
-
400
mW
[1][3]
-
1.25
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Operated under pulse conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms.
mle128
500
Ptot
(mW)
400
(1)
300
(2)
200
100
0
0
40
80
120
160
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS5160T_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
3 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
Rth(j-a)
in free air
Min
Typ
Max
Unit
[1]
-
-
465
K/W
[2]
-
-
312
K/W
[1][3]
-
-
100
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Operated under pulse conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms.
mle127
103
Zth
(K/W)
102
δ=1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance as a function of pulse duration; typical values
PBSS5160T_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
4 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
ICBO
Conditions
collector-base cut-off VCB = −60 V; IE = 0 A
current
VCB = −60 V; IE = 0 A;
Tj = 150 °C
Typ
Max
Unit
-
-
−100
nA
-
−50
μA
ICES
collector-emitter
cut-off current
VCE = −60 V; VBE = 0 V
-
-
−100
nA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −5 V
IC = −1 mA
VCEsat
collector-emitter
saturation voltage
200
350
-
IC = −500 mA
[1]
150
250
-
IC = −1 A
[1]
100
160
-
IC = −100 mA; IB = −1 mA
-
−110
−160
mV
IC = −500 mA;
IB = −50 mA
-
−120
−175
mV
IC = −1 A; IB = −100 mA
[1]
-
−220
−330
mV
RCEsat
collector-emitter
IC = −1 A; IB = −100 mA
saturation resistance
[1]
-
220
330
mΩ
VBEsat
base-emitter
saturation voltage
IC = −1 A; IB = −50 mA
-
−0.95
−1.1
V
VBEon
base-emitter
turn-on voltage
VCE = −5 V; IC = −1 A
-
−0.82
−0.9
V
fT
transition frequency
VCE = −10 V;
IC = −50 mA; f = 100 MHz
150
220
-
MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
-
9
15
pF
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS5160T_4
Product data sheet
Min
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
5 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
mle124
600
hFE
−2
IC IB (mA) = − 20 −24 −28 −32 −36 −40
(A)
mle125
−1.6
(1)
−16
400
−12
−1.2
(2)
−8
−0.8
200
−4
(3)
−0.4
0
−10−1
−1
−10
−102
0
−103
−104
IC (mA)
0
VCE = −5 V
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
DC current gain as a function of collector
current; typical values
mle122
−1.2
Fig 4.
Collector current as a function of
collector-emitter voltage; typical values
mle123
−1.2
VBEsat
(V)
VBE
(V)
−1
(1)
−0.8
(1)
(2)
(2)
−0.8
(3)
(3)
−0.6
−0.4
−0.4
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
−0.2
−10−1
VCE = −5 V
−1
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
Fig 6.
−103
−104
IC (mA)
Base-emitter saturation voltage as a function
of collector current; typical values
PBSS5160T_4
Product data sheet
−102
IC/IB = 20
(1) Tamb = −55 °C
Fig 5.
−10
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
6 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
mle126
−10
VCEsat
mle119
−1
VCEsat
(V)
(V)
−10−1
−1
(2)
−10−1
−10−2
(1)
(3)
(2) (1)
(3)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
−10−3
−10−1
−1
IC/IB = 20
IC/IB = 10
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7.
−102
−10
−103
−104
IC (mA)
(3) Tamb = −55 °C
Collector-emitter saturation voltage as a
function of collector current; typical values
mle120
−10
Fig 8.
Collector-emitter saturation voltage as a
function of collector current; typical values
mle121
103
RCEsat
(Ω)
VCEsat
(V)
102
−1
10
−10−1
(1)
1
(1)
(2)
(2)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(3)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) IC/IB = 100
(1) Tamb = 100 °C
(2) IC/IB = 50
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS5160T_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
7 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
8. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBSS5160T
[1]
Package Description
SOT23
4 mm pitch, 8 mm tape and reel
3000
10000
-215
-235
For further information and the availability of packing methods, see Section 12.
PBSS5160T_4
Product data sheet
Packing quantity
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
8 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5160T_4
20100115
Product data sheet
-
PBSS5160T_N_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Table 1 “Quick reference data”: amended
Section 4 “Marking”: amended
Figure 4: updated
Figure 11: superseded by minimized package outline drawing
Section 9 “Packing information”: added
Section 11 “Legal information”: updated
PBSS5160T_N_3
20080718
Product data sheet
-
PBSS5160T_2
PBSS5160T_2
20040527
Product specification
-
PBSS5160T_1
PBSS5160T_1
20030623
Product specification
-
-
PBSS5160T_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
9 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS5160T_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 15 January 2010
10 of 11
PBSS5160T
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 15 January 2010
Document identifier: PBSS5160T_4