BGM1013 MMIC wideband amplifier

BGM1013
MMIC wideband amplifier
Rev. 5 — 19 September 2011
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits








Internally matched to 50 
Good output match to 75 
Very high gain; 35.5 dB at 1 GHz
Upper corner frequency at 2.1 GHz
31 dB flat gain up to 2.2 GHz application
14 dBm saturated output power at 1 GHz
High linearity (23 dBm IP3out and 43 dBc IM2)
40 dB isolation.
1.3 Applications
 Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers
 Cable systems
 General purpose.
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VS
DC supply voltage
RF input; AC coupled
-
5
6
V
IS
DC supply current
23
27.5
33
mA
s212
insertion power gain
f = 1 GHz
34.5
35.5
36.2
dB
NF
noise figure
f = 1 GHz
-
4.6
4.7
dB
PL(sat)
saturated load power
f = 1 GHz
13.0
14.0
-
dBm
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
2. Pinning information
Table 2.
Pinning
Pin
Description
1
VS
2, 5
GND2
3
RF_OUT
4
GND1
6
Simplified outline
6
5
4
1
2
3
Symbol
1
6
RF_IN
3
4
2, 5
sym062
3. Ordering information
Table 3.
Ordering information
Type number
BGM1013
Package
Name
Description
Version
SC-88
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking codes
Type number
Marking code
BGM1013
C4-
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BGM1013
Product data sheet
Symbol
Parameter
Conditions
RF input; AC coupled
VS
DC supply voltage
IS
DC supply current
Ptot
total power dissipation
Tstg
Min
Max
Unit
-
6
V
-
35
mA
-
200
mW
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
PD
maximum drive power
-
10
dBm
Tsp  90 C
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
2 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
6. Recommended operating conditions
Table 6.
Operating conditions
Symbol
Parameter
VS
Tamb
Conditions
Min
Typ
Max
Unit
supply voltage
4.5
5.0
5.5
V
ambient temperature
40
25
85
C
7. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction to solder point
Ptot = 200 mW; Tsp  90 C
300
K/W
8. Characteristics
Table 8.
Characteristics
VS = 5 V; IS = 27.5 mA; Tj = 25 C; measured on demo board; unless otherwise specified.
Symbol Parameter
VS
DC supply voltage
IS
DC supply current
s212
insertion power gain
s112
s222
input return loss
output return loss
Conditions
Min
Typ
Max
Unit
RF input; AC coupled
-
5
6
V
23
27.5
33
mA
f = 100 MHz
34.5
35.2
35.9
dB
f = 1 GHz
34.5
35.5
36.2
dB
f = 1.8 GHz
33.0
34.0
35.2
dB
f = 2.2 GHz
30.5
31.8
33.1
dB
f = 2.6 GHz
25.2
29.7
31.2
dB
f = 3 GHz
24.0
26.1
27.9
dB
f = 1 GHz
10.1
10.6
-
dB
f = 2.2 GHz
9.3
10.2
-
dB
f = 1 GHz
18
20
-
dB
f = 2.2 GHz
13
16
-
dB
ZL = 50 
ZL = 75 
s122
NF
isolation
noise figure
f = 1 GHz
15
17
-
dB
f = 2.2 GHz
12
15
-
dB
f = 1 GHz
40
42
-
dB
f = 2.2 GHz
34
36
-
dB
f = 1 GHz
-
4.6
4.7
dB
f = 2.2 GHz
-
4.9
5.1
dB
GHz
B
bandwidth
3 dB below flat gain at f = 1 GHz
-
2.1
-
K
stability factor
f = 1 GHz
1.2
1.3
-
f = 2.2 GHz
0.9
1.0
-
PL(sat)
saturated load power
f = 1 GHz
13.0
14.0
-
dBm
f = 2.2 GHz
9.0
10.2
-
dBm
BGM1013
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
3 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
Table 8.
Characteristics …continued
VS = 5 V; IS = 27.5 mA; Tj = 25 C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
PL(1dB)
load power at 1 dB gain
compression
f = 1 GHz
12.0
13.0
-
dBm
f = 2.2 GHz
7.0
8.1
-
dBm
input third order intercept point
f = 1 GHz
14
12.8
-
dBm
f = 2.2 GHz
15
13.2
-
dBm
21
22.7
-
dBm
17
18.6
-
dBm
IP3in
IP3out
output third order intercept point f = 1 GHz
f = 2.2 GHz
IM2
second order intermodulation
product
f0 = 1 GHz; PD = 45 dBm (PL = 10 dBm)
-
45
43
dBc
f0 = 1 GHz; PD = 40 dBm (PL = 5 dBm)
-
43
41
dBc
9. Application information
Figure 1 shows a typical application circuit for the BGM1013 MMIC. The device is
internally matched to 50  and therefore does not need any external matching. Output
impedance is also very good to 75  load. The value of the input and output DC blocking
capacitors C1 and C2 should be not more than 100 pF for applications above 100 MHz.
Their values can be used to fine-tune the input and output impedance.
For the RF-choke, optimal results are obtained with a good quality chip inductor like the
TDK MLG1608 (0603) or a wire-wound SMD. The value of the inductor can be used to
fine-tune the output impedance.
The RF choke and supply decoupling components should be located as close as possible
to the MMIC.
Ground paths must be as short as possible. The printed-circuit board (PCB) top ground
plane must be as close as possible to the MMIC, and ideally directly beneath it. When
using vias, use at least 3 vias for the top ground plane in order to limit ground path
inductance. Supply decoupling with C3 should be from pin 1 to the same top ground
plane.
VS
VS
1
IN 6
RF in
C3
L1
C2
3
OUT
C1
RF out
R1(1)
BGM1013
SOT363
4
2, 5
GND1
GND2
001aab389
(1) R1 is omitted in typical application.
Fig 1.
BGM1013
Product data sheet
Typical application circuit
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
4 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
Figure 2 shows the PCB layout used for the typical application.
30 mm
PH
30 mm
IN
OUT
V+
PH
IC1
C2
C1
L1
IN
OUT
C3
V+
001aab395
Material = FR4; thickness = 0.6 mm; r = 4.6.
Fig 2.
Table 9.
BGM1013
Product data sheet
Printed-circuit board layout and component view for typical application
List of components used for the typical application
Component
Description
Value
Dimensions
C1, C2
multilayer ceramic chip capacitor
100 pF
0603
C3
multilayer ceramic chip capacitor
22 nF
0603
R1
SMD resistor
-
0603
L1
SMD inductor
100 nH
0603
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
9.1 Flat gain application: 31 dB between 800 MHz and 2.2 GHz
By changing the components at the output of the amplifier, a flatter gain can be obtained.
The gain is 31 dB  1 dB between 800 MHz and 2.2 GHz. PL(1dB) is 10 dBm at 1 GHz and
5.7 dBm at 2.2 GHz.
30 mm
PH
30 mm
IN
OUT
V+
PH
IC1
C2 R1
C1
L1
IN
OUT
C3
V+
001aab397
Fig 3.
Table 10.
Product data sheet
List of components used for the 31 dB flat gain application[1]
Component
Description
Value
Dimensions
C1
multilayer ceramic chip capacitor
100 pF
0603
C2
multilayer ceramic chip capacitor
4.7 pF
0603
C3
multilayer ceramic chip capacitor
22 nF
0603
R1
SMD resistor
27 
0603
L1
SMD inductor
5.6 nH
0603
[1]
BGM1013
Printed-circuit board layout and component view for 31 dB flat gain application
Pin 2 should not be connected in order to obtain optimal input matching.
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
6 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
0.5
1
100 MHz
2
5
10
0°
0
3 GHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
1.0
−90°
001aab399
IS = 27.5 mA; VS = 5 V; PD = 35 dBm; Zo = 50 .
Fig 4.
Input reflection coefficient (s11); typical values
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
100 MHz
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
3 GHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
−90°
1.0
001aab401
IS = 27.5 mA; VS = 5 V; PD = 35 dBm; Zo = 50 .
Fig 5.
BGM1013
Product data sheet
Output reflection coefficient (s22); typical values
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
7 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
001aab402
0
|s12| 2
(dB)
−10
001aab404
40
|s21| 2
(dB)
35
(1)
−20
(2)
30
−30
(3)
25
−40
−50
20
0
1000
2000
3000
0
1000
2000
f (MHz)
3000
f (MHz)
IS = 27.5 mA; VS = 5 V; PD = 35 dBm; Zo = 50 .
PD = 35 dBm; Zo = 50 .
(1) IS = 32.6 mA; VS = 5.5 V.
(2) IS = 27.5 mA; VS = 5 V.
(3) IS = 21.5 mA; VS = 4.5 V.
(s122)
Fig 6.
Isolation
as a function of frequency;
typical values
001aab406
20
(1)
PL
(dBm)
(2)
Insertion gain (s212) as a function of
frequency; typical values
Fig 7.
001aab408
15
PL
(dBm)
(1)
(2)
10
(3)
(3)
10
5
0
0
−5
−10
−45
−35
−25
PD (dBm)
−15
−10
−40
f = 1 GHz; Zo = 50 .
(1) VS = 5.5 V.
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
(3) VS = 4.5 V.
Load power as a function of drive power at
1 GHz; typical values
BGM1013
Product data sheet
−20
PD (dBm)
−10
f = 2.2 GHz; Zo = 50 .
(2) VS = 5 V.
Fig 8.
−30
Fig 9.
Load power as a function of drive power at
2.2 GHz; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
8 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
001aab410
6
001aab411
5
K
NF
(dB)
4
5.5
3
5
(1)
2
(2)
(3)
4.5
1
4
0
0
500
1000
1500
2000
2500
f (MHz)
Zo = 50 .
0
1000
2000
3000
4000
f (MHz)
IS = 27.5 mA; VS = 5 V; Zo = 50 .
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
Fig 10. Noise figure as a function of frequency; typical
values
BGM1013
Product data sheet
Fig 11. Stability factor as a function of frequency;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
9 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
Table 11. Scattering parameters
VS = 5 V; IS = 27.5 mA; PD = 35 dBm; Zo = 50 ; Tamb = 25 C; measured on demo board.
f (MHz)
s11
s21
s12
s22
K-factor
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
100
0.259
19.3
57.79
2.5
0.01642
47.3
0.325
118.6
0.9
200
0.258
3.2
57.96
10.9
0.01096
20.7
0.248
110.9
1.0
400
0.270
25.6
60.08
41.2
0.00712
12.6
0.163
87.0
1.3
600
0.271
43.7
60.60
67.0
0.00751
13.9
0.134
63.2
1.2
800
0.281
61.5
60.74
95.6
0.00687
12.1
0.104
43.7
1.3
1000
0.296
80.1
60.44
121.2
0.00759
7.3
0.092
37.7
1.2
1200
0.317
102.3
59.21
147.1
0.00828
11.5
0.097
33.9
1.2
1400
0.335
127.7
57.01
172.9
0.00981
16.8
0.123
25.6
1.1
1600
0.334
158.1
54.46
160.8
0.01130
25.1
0.142
6.0
1.0
1800
0.331
169.6
50.31
134.1
0.01272
34.0
0.157
14.2
1.0
2000
0.326
130.6
44.63
104.7
0.01571
43.0
0.172
39.8
0.9
2200
0.309
95.9
38.92
79.4
0.01826
57.0
0.172
61.9
0.9
2400
0.287
59.0
33.31
55.5
0.01994
69.2
0.161
83.5
1.0
2600
0.257
20.4
28.20
33.1
0.01952
78.3
0.147
104.4
1.1
2800
0.224
15.5
23.60
13.1
0.02037
89.9
0.139
125.1
1.2
3000
0.198
50.7
20.24
4.8
0.02198
99.8
0.127
151.5
1.3
BGM1013
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
10 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
10. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
JEITA
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
Fig 12. Package outline SOT363 (SC-88)
BGM1013
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
11 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
11. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGM1013 v.5
20110919
Product data sheet
-
BGM1013 v.4
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BGM1013 v.4
20060501
Product data sheet
-
BGM1013 v.3
BGM1013 v.3
(9397 750 14413)
20041209
Product data sheet
-
BGM1013 v.2
BGM1013 v.2
(9397 750 14229)
20041130
Product data sheet
-
BGM1013 v.1
BGM1013 v.1
(9397 750 13469)
20040831
Product data sheet
-
-
BGM1013
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
12 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BGM1013
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
13 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BGM1013
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 19 September 2011
© NXP B.V. 2011. All rights reserved.
14 of 15
BGM1013
NXP Semiconductors
MMIC wideband amplifier)
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Recommended operating conditions. . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Flat gain application: 31 dB between 800 MHz
and 2.2 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 September 2011
Document identifier: BGM1013